IXFH16N50P3 [IXYS]
Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN;
| 型号： | IXFH16N50P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Polar3 TM HiPerFETTM
Power MOSFETs
VDSS = 500V
ID25 = 16A
RDS(on) 360m
IXFA16N50P3
IXFP16N50P3
IXFH16N50P3
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-220AB (IXFP)
TJ = 25C to 150C
500
500
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
D (Tab)
S
ID25
IDM
TC = 25C
16
40
A
A
TO-247 (IXFH)
TC = 25C, Pulse Width Limited by TJM
IA
TC = 25C
TC = 25C
8
A
EAS
300
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
35
V/ns
W
G
D
S
D (Tab)
330
TJ
-55 ... +150
150
C
C
C
G = Gate
S = Source
D
= Drain
TJM
Tstg
Tab = Drain
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 2.5mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
500
V
V
3.0
5.0
Applications
100 nA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
15 A
250 A
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
360 m
DS100456A(11/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA16N50P3 IXFP16N50P3
IXFH16N50P3
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
9
15
S
RGi
2.8
Ciss
Coss
Crss
1515
193
7
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
19
6
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
44
9
RG = 10 (External)
Qg(on)
Qgs
29
7
nC
nC
nC
1 = Gate
2 = Drain
3 = Source
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
10
RthJC
RthCS
0.38 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
16
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
64
1.4
V
TO-220 Outline
trr
250
ns
IF = 8A, -di/dt = 100A/μs
QRM
IRM
0.8
8.7
C
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
TO-263 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
4 = Drain
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA16N50P3 IXFP16N50P3
IXFH16N50P3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
36
32
28
24
20
16
12
8
16
14
12
10
8
VGS = 10V
VGS = 10V
8V
8V
7V
7V
6V
6V
6
4
5V
2
4
5V
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 8A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
16
14
12
10
8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
7V
VGS = 10V
6V
I D = 16A
I D = 8A
6
5V
4V
4
2
0
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 8A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
18
16
14
12
10
8
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
6
4
2
0
0
4
8
12
16
20
24
28
32
36
40
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXFA16N50P3 IXFP16N50P3
IXFH16N50P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
30
25
20
15
10
5
20
18
16
14
12
10
8
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
6
4
2
0
0
0
2
4
6
8
10
12
14
16
18
20
22
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
50
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
VDS = 250V
I
I
D = 8A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
15
20
25
30
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10
1
10,000
1,000
100
10
RDS(on) Limit
= 1 MHz
f
C
iss
25µs
100µs
C
C
oss
TJ = 150ºC
C = 25ºC
Single Pulse
T
1ms
rss
1
0.1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA16N50P3 IXFP16N50P3
IXFH16N50P3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_16N50P3(K4)3-23-12
相关型号：
IXFH16N60P3
Power Field-Effect Transistor, 16A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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