IXFH20N80P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFH20N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTMHiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
VDSS = 800 V
ID25 = 20 A
RDS(on) ≤ 520 mΩ
trr
≤ 250 ns
Fast Intrinsic Diode
Symbol
TestConditions
Maximum Ratings
TO-247 (IXFH)
VDSS
VDGR
TJ = 25° C to 150° C
800
800
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
(TAB)
VGSS
VGSM
Continuous
Transient
30
40
V
V
TO-268 (IXFT)
ID25
IDM
TC = 25° C
20
50
A
A
TC = 25° C, pulse width limited by TJM
IAR
TC = 25° C
10
A
G
S
EAR
EAS
TC = 25° C
TC = 25° C
30
mJ
J
D (TAB)
1.0
PLUS220 (IXFV)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
TC = 25° C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D (TAB)
D
S
PLUS220 SMD(IXFV..S)
TL
TSOLD
Maximum lead temperature for soldering
Plastic case for 10 s
300
260
°C
°C
Md
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
G
S
FC
Mounting force (PLUS220)
1..65 / 2.5..15
N/lb
D (TAB)
Weight
TO-247
TO-268
PLUS220 types
6
5.5
4
g
g
g
G = Gate
D
= Drain
S = Source Tab = Drain
Features
l
Symbol
TestConditions
Characteristic Values
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
800
V
V
l
VDS = VGS, ID = 4 mA
3.0
5.0
200
25
VGS
=
30 VDC, VDS = 0
nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
µA
µA
l
Easy to mount
Space savings
High power density
TJ = 125° C
1000
l
RDS(on)
VGS = 10 V, ID = 10 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
520 m Ω
l
DS99511E(03/06)
© 2006 IXYS All rights reserved
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 10 A, pulse test
14
23
S
Ciss
Coss
Crss
4685
356
26
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
30
24
85
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 2 Ω (External)
Qg(on)
Qgs
86
27
24
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
Qgd
RthJC
RthCS
0.25 °C/W
°C/W
(TO-247, PLUS220)
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
Symbol
IS
TestConditions
VGS = 0 V
20
50
A
ISM
Repetitive
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
250
ns
µC
A
QRM
IRM
VR = 100V; VGS = 0 V
0.8
6.0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2
oneormoreofthefollowingU.S.patents:
6,259,123B1
6,306,728 B1
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
20
18
16
14
12
10
8
36
32
28
24
20
16
12
8
V
GS
= 10V
7V
V
= 10V
7V
GS
6V
6V
6
5V
4
5V
4
2
0
0
0
2
4
6
8
10
12
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Norm alized to ID = 10A
)
º
C
Value vs. Junction Tem perature
20
18
16
14
12
10
8
2.6
V
= 10V
7V
GS
2.4
2.2
2
V
= 10V
GS
1.8
1.6
1.4
1.2
1
6V
I
= 20A
D
I
= 10A
D
6
4
0.8
0.6
0.4
2
5V
0
0
2
4
6
8
10 12 14 16 18 20 22
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
ID = 10A Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
2.6
2.4
2.2
2
22
20
18
16
14
12
10
8
V
= 10V
GS
T = 125 C
º
J
1.8
1.6
1.4
1.2
1
6
4
T = 25 C
º
J
2
0.8
0
0
5
10
15
20
25
30
35
40
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
Fig. 7. Input Adm ittance
Fig. 8. Transconductance
40
35
30
25
20
15
10
5
24
20
16
12
8
T
J
= -40 C
º
25
125
º
C
º
C
T
J
= 125
º
C
C
C
25
º
º
-40
4
0
0
0
5
10
15
20
25
3.5 3.75
4
4.25 4.5 4.75
5
5.25 5.5 5.75
I D - Amperes
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
60
50
40
30
20
10
0
V
I
= 400V
DS
= 10A
D
I
= 10mA
G
T = 125 C
º
J
T = 25 C
º
J
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10
20
30
40
50
60
70
80
90
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10000
1000
100
1.00
0.10
0.01
C
iss
C
oss
f = 1MHz
C
rss
20
10
0
5
10
15
25
30
35
40
0.1
1
10
100
1000
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 20N80P IXFT 20N80P
IXFV 20N80P IXFV 20N80PS
PackageOutlineDrawings
TO-247AD (IXFH) Outline
TO-268 (IXFT) Outline
1
2
3
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
PLUS220SMD(IXFV_S) Outline
PLUS220 (IXFV) Outline
© 2006 IXYS All rights reserved
IXYSREF:F_20N80P(7J)03-01-06-A.XLS
相关型号：
IXFH21N50S
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN
IXYS
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