IXFH69N30P [IXYS]
Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFH69N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiPerFETTM
Power MOSFET
VDSS = 300V
ID25 = 69A
RDS(on) ≤ 49mΩ
trr ≤ 200ns
IXFH69N30P
IXFT69N30P
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXFH)
Fast Intrinsic Diode
G
D
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
300
300
V
V
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 20
± 30
TO-268 (IXFT)
ID25
IDM
TC = 25°C
69
A
A
G
TC = 25°C, Pulse Width Limited by TJM
200
S
IA
TC = 25°C
TC = 25°C
69
A
J
D (Tab)
EAS
1.5
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ≤ 150°C
20
V/ns
W
G = Gate
S = Source
D
= Drain
TC = 25°C
500
Tab = Drain
TJ
-55 to +150
+150
°C
°C
°C
TJM
Tstg
Features
-55 to +150
z International Standard Packages
z Fast Intrinsic Diode
TL
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
TSOLD
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
300
2.5
Typ.
Max.
z DC-DC Coverters
z Battery Chargers
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250µA
VDS = VGS, ID = 4mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
5.0
z Switch-Mode and Resonant-Mode
Power Supplies
±100 nA
z DC Choppers
IDSS
25 µA
z AC and DC Motor Drives
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
250 µA
z
Uninterrupted Power Supplies
High Speed Power Switching
RDS(on)
49 mΩ
z
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS99220F(10/09)
IXFH69N30P
IXFT69N30P
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
30
48
S
Ciss
Coss
Crss
4960
760
pF
pF
pF
∅ P
1
2
3
190
td(on)
tr
td(off)
tf
25
25
75
27
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 69A
RG = 4Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Qg(on)
Qgs
156
32
nC
nC
nC
3 - Source
VGS = 10V, VDS = 0.5 • VDSS, ID = 34.5A
Dim.
Millimeter
Inches
Min. Max.
Qgd
79
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.25 °C/W
°C/W
TO-247
0.21
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
∅P 3.55
3.65
.140 .144
Symbol
Test Conditions
Characteristic Values
Q
5.89
6.40 0.232 0.252
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
69
A
A
V
TO-268 (IXFT) Outline
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
270
1.5
100
500
200 ns
IF = 25A, -di/dt = 100A/µs,
VR = 100V, VGS = 0V
QRM
nC
Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFH69N30P
IXFT69N30P
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
60
50
40
30
20
10
0
180
160
140
120
100
80
VGS = 10V
8V
VGS = 10V
9V
8V
7V
7V
6V
60
6V
5V
40
5V
20
0
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 34.5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
70
60
50
40
30
20
10
0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
8V
VGS = 10V
7V
6V
I D = 69A
I D = 34.5A
5V
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 6. Maximum Drain Current
vs. Case Temperature
Fig. 5. RDS(on) Normalized to ID = 34.5A Value
vs. Drain Current
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
TJ = 125ºC
TJ = 25ºC
20
40
60
80
100
120
140
160
180
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFH69N30P
IXFT69N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
10
20
30
40
50
60
70
80
90
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
200
180
160
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
VDS = 150V
I D = 34.5A
I G = 10mA
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0
20
40
60
80
100
120
140
160
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000.0
100.0
10.0
1.0
10,000
1,000
100
RDS(on) Limit
C
iss
25µs
100µs
1ms
C
C
oss
10ms
100ms
TJ = 150ºC
TC = 25ºC
DC
= 1 MHz
5
f
Single Pulse
rss
0.1
0
10
15
20
25
30
35
40
1
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH69N30P
IXFT69N30P
Fig. 12. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_69N30P(7S)10-16-09-A
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