IXFJ32N50Q [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFJ32N50Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
VDSS = 500 V
ID(cont) = 32 A
RDS(on) = 0.15 W
IXFJ 32N50Q
trr
< 250 ns
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
G
TJ = 25°C to 150°C; RGS = 1 MW
D
é
(TAB)
S
VGS
Continuous
Transient
±20
±30
V
V
VGSM
G = Gate,
S = Source,
D = Drain,
TAB = Drain
ID25
IDM
IAR
TC = 25°C
32
128
32
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAs
TC = 25°C
TC = 25°C
1.5
45
5
J
mJ
EAR
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
PD
TC = 25°C
360
W
TJ
-55 ... +150
150
°C
°C
°C
• Low R
low Qg process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
-55 ... +150
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
500
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
100 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• High power, low profile package
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.15
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98579B(5/31/00)
1 - 4
IXFJ 32N50Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-268 Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
18
28
S
Ciss
Coss
Crss
3950
640
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
210
td(on)
tr
td(off)
tf
35
42
75
20
ns
ns
ns
ns
All metal area are
solderplated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 2 W (External)
Qg(on)
Qgs
153
26
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Dim.
Inches
Millimeters
Min
Max
Min
Max
Qgd
85
A
A1
.193
.106
.201
.114
4.90 5.10
2.70 2.90
RthJC
RthCK
0.35 K/W
K/W
b
b2
.045
.075
.057
.083
1.15 1.45
1.90 2.10
0.25
C
C2
.016
.057
.026
.063
.040 .065
1.45 1.60
D
D1
.543
.488
.551
.500
13.80 14.00
12.40 12.70
E
E1
e
.624
.524
.215 BSC
.632
.535
15.85 16.05
13.30 13.60
5.45 BSC
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
H
1.365 1.395 34.67 35.43
L
L1
L2
.780
.079
.039
.800
.091
.045
19.81 20.32
2.00 2.30
1.00 1.15
IS
VGS = 0 V
32
A
A
ISM
Repetitive;
128
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
Qrr
IRM
250
ns
mC
A
IF = IS -di/dt = 100 A/ms, VR = 100 V
0.75
7.5
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFJ 32N50Q
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
VGS=10V
TJ = 25OC
TJ = 125OC
VGS= 9V
9V
6V
8V
7V
8V
7V
6V
5V
5V
4V
0
4
8
12
16
20
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
2.8
2.4
2.0
1.6
1.2
0.8
2.8
2.4
2.0
1.6
1.2
0.8
VGS = 10V
VGS = 10V
Tj=1250
C
ID = 32A
ID = 16A
Tj=250
40
C
25
50
75
100
125
150
0
10
20
30
50
60
TJ - Degrees C
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
40
32
24
16
8
50
40
30
20
10
0
TJ = 25oC
TJ = 125oC
0
-50 -25
0
25
50
75 100 125 150
2
3
4
5
6
TC - Degrees C
VGS - Volts
© 2000 IXYS All rights reserved
3 - 4
IXFJ 32N50Q
Figure 7. Gate Charge
Figure 8. Capacitance Curves
14
12
10
8
10000
1000
100
F = 1MHz
Vds=300V
ID=16A
IG=10mA
Ciss
Coss
Crss
6
4
2
0
0
50
100
150
200
250
0
5
10
15
20
25
Gate Charge - nC
VDS - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
80
60
40
20
0
VGS= 0V
TJ=125OC
TJ=25OC
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
0.40
0.20
0.10
0.08
0.06
0.04
0.02
0.01
10-3
10-2
10-1
Pulse Width - Seconds
100
101
© 2000 IXYS All rights reserved
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