IXFK180N15P [IXYS]
Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFK180N15P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
VDSS = 150 V
ID25 = 180 A
IXFK 180N15P
IXFX 180N15P
RDS(on) ≤ 11 m Ω
trr
≤ 200 ns
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
VDS
VGSM
Continuous
Transient
20
30
V
V
TO-264 (IXFK)
ID25
TC =25° C
180
75
A
A
A
ID(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
380
IAR
TC =25° C
60
A
G
D
S
TAB
EAR
EAS
TC =25° C
TC =25° C
100
4
mJ
J
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
10
V/ns
PLUS247 (IXFX)
TC =25° C
830
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
TAB
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
Md
Fc
Mounting torque
Mounting Force
(IXFK)
(IXFX)
1.13/10 Nm/lb.in.
20..120/4.5..25
N/lb
Weight
TO-264 (IXFK)
PLUS247 (IXFX)
10
6
g
g
Features
Symbol
Test Conditions
Characteristic Values
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
150
V
V
l
2.5
5.0
200
nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 150° C
l
Easy to mount
Space savings
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
11 mΩ
l
High power density
DS99218E(01/06)
© 2006 IXYS All rights reserved
IXFK 180N15P
IXFX 180N15P
Symbol
gfs
Test Conditions
Characteristic Values
PLUS 247TM Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
55
86
S
Ciss
Coss
Crss
7000
2250
515
pF
pF
pF
td(on)
tr
td(off)
tf
30
32
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
150
36
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
240
55
nC
nC
nC
Dim.
Millimeter
Inches
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
140
RthJC
RthCS
0.18° C/W
° C/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
3.81
4.32
Symbol
IS
Test Conditions
Min.
Typ.
Max.
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
VGS = 0 V
Repetitive
180
A
A
V
TO-264 AA Outline
ISM
380
1.3
VSD
IF = 90A, VGS = 0 V,
Note 1
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
0.6
200 ns
µC
Note 1: Pulse test, t ≤300 µs, duty cycle d≤ 2 %
Millimeter
Dim.
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
0.53
25.91 26.16
0.83
.021
1.020
.780
.033
1.030
.786
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFK 180N15P
IXFX 180N15P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25 C
º
º
C
180
160
140
120
100
80
320
280
240
200
160
120
80
VGS = 10V
V
GS
= 10V
9V
9V
8V
8V
7V
60
7V
6V
40
40
20
6
0
0
0
0
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
7
8
9
10
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
º
C
180
160
140
120
100
80
2.8
2.6
2.4
2.2
2
VGS = 10V
9V
VGS = 10V
8
ID = 180A
1.8
1.6
1.4
1.2
1
7V
ID = 90A
60
6V
5V
40
20
0.8
0.6
0
0.5
1
1.5 2
VD S - Volts
2.5
3
3.5
4
-50 -25
0
25
50
TJ - Degrees Centigrade
75 100 125 150 175
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
90
80
70
60
50
40
30
20
10
0
External Lead Current Limit
º
TJ = 175 C
VGS = 10V
V
GS
= 15V
º
TJ = 25 C
0.7
-50 -25
0
25
50
TC - Degrees Centigrade
75 100 125 150 175
50
100
150 200
I D - Amperes
250
300
350
© 2006 IXYS All rights reserved
IXFK 180N15P
IXFX 180N15P
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
225
200
175
150
125
100
75
120
100
80
60
40
20
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = 150 C
25ºC
-40ºC
50
25
0
4
4.5
5
5.5
6
6.5
VG S - Volts
7
7.5
8
8.5
9
0
0
1
25 50 75 100 125 150 175 200 225 250
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 75V
ID = 90A
IG = 10mA
º
TJ = 150 C
º
TJ = 25 C
0
0.3
0.5
0.7
0.9
VS D - Volts
1.1
1.3
1.5
25 50 75 100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1000
100
10
f = 1MHz
RDS(on) Limit
25µs
C
C
is
100µs
os
1ms
C
rs
10ms
º
TJ = 175 C
DC
º
C = 25 C
T
10
100
1000
0
5
10
15 20
VDS - Volts
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 180N15P
IXFX 180N15P
Fig . 13 . M a xim u m T r a n s ie n t T h e r m a l Re s is ta n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Puls e W id th - millis ec o n ds
© 2006 IXYS All rights reserved
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