IXFK73N30Q [IXYS]
HiPerFET Power MOSFETs Q-CLASS; HiPerFET功率MOSFET Q系列
| 型号： | IXFK73N30Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-CLASS |
| 文件： | 总2页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-CLASS
IXFX 73N30Q VDSS = 300 V
IXFK 73N30Q ID25 = 73 A
RDS(on) = 42 mΩ
t ≤ 250 µs
Single MOSFET Die
rr
N-ChannelEnhancementMode
Avalanche Rated, Low Qg,
High dV/dt, Low t
rr
PLUS247TM (IXFX)
Preliminary data sheet
Symbol
TestConditions
Maximum Ratings
(TAB)
G
VDSS
VDGR
T
T
= 25°C to 150°C
= 25°C to 150°C; R = 1 MΩ
300
300
V
V
J
J
D
GS
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-264AA(IXFK)
ID25
IDM
IAR
T
= 25°C
73
292
73
A
A
A
C
T
= 25°C, pulse width limited by T
= 25°C
C
JM
T
G
D
C
(TAB)
S
EAR
EAS
T
= 25°C
= 25°C
60
2.5
mJ
J
C
T
C
G = Gate
S = Source
D = Drain
TAB = Drain
dv/dt
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V
5
V/ns
S
DM
DD
DSS
T
≤ 150°C, R = 2 Ω
J
G
PD
T
= 25°C
500
W
C
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
TL
1.6 mm (0.063 in.) from case for 10 s
Mounting torque (TO-264)
300
°C
- faster switching
International standard packages
Low RDS (on)
l
l
l
Md
0.4/6 Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Symbol
VDSS
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
l
l
J
Batterychargers
Switched-mode and resonant-mode
min. typ. max.
l
power supplies
DC choppers
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
300
2.0
V
l
l
VGS(th)
IGSS
4.0 V
AC motor control
Temperatureandlightingcontrols
l
V
= ±20 V, V = 0
±100 nA
GS
DS
Advantages
PLUS 247 package for clip or spring
IDSS
V
= V 0.8 V
DSS
100 µA
2 mA
DS
DSS
l
TM
V
= 0 V
T
= 125°C
GS
J
mounting
Space savings
High power density
RDS(on)
V
Note 1
= 10 V, I = 0.5 I
42 mΩ
l
l
GS
D
D25
98870 (12/01)
© 2001 IXYS All rights reserved
IXFK 73N30Q
IXFX 73N30Q
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
PLUS247TM Outline
J
min. typ. max.
V
= 10 V; I = 0.5 I
D25
Note 1
30
47
S
DS
D
Ciss
Coss
Crss
6400
1340
340
pF
pF
pF
V
= 0 V, V = 25 V, f = 1 MHz
GS
DS
td(on)
tr
td(off)
tf
37
36
82
12
ns
ns
ns
ns
V
= 10 V, V = 0.5 V , I = 0.5 I
D25
GS
DS
DSS
D
R = 1 Ω (External)
G
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
190
51
nC
nC
nC
Dim.
A
Millimeter
Min. Max.
Inches
Min. Max.
V
= 10 V, V = 0.5 V , I = 0.5 I
DS DSS D D25
GS
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
78
A
1
A
2
RthJC
RthCK
0.26 K/W
K/W
b
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
1
0.15
b
2
C
D
0.61
0.80
.024 .031
.819 .840
20.80 21.34
E15.75 16.13
.620 .635
e
5.45 BSC
19.81 20.32
.215 BSC
Source-DrainDiode
Characteristic Values
(T = 25°C, unless otherwise specified)
L
.780 .800
.150 .170
J
L1
3.81
4.32
Symbol
TestConditions
= 0 V
min. typ. max.
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IS
V
73
A
A
GS
TO-264 AA Outline
ISM
Repetitive;
pulse width limited by T
292
JM
VSD
I = I , V = 0 V, Note 1
1.5
V
F
S
GS
trr
250 ns
I = 25A, -di/dt = 100 A/µs, V = 100 V
QRM
IRM
0.8
7
µC
F
R
A
Millimeter
Dim.
Inches
Min.
Max.
Min.
Max.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
A
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
A1
A2
.114
.083
b
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
b1
b2
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
D
E
e
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
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