IXFN160N30T [IXYS]
GigaMOS Power MOSFET; GigaMOS功率MOSFET
| 型号： | IXFN160N30T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS Power MOSFET |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM
Power MOSFET
VDSS = 300V
ID25 = 130A
RDS(on) ≤ 19mΩ
IXFN160N30T
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
G
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
300
300
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
S
D
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
130
440
A
A
G = Gate
S = Source
D = Drain
IA
TC = 25°C
TC = 25°C
40
3
A
J
EAS
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
900
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Isolation voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z Avalanche Rated
z
Low RDS(on)
Weight
30
g
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
300
2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z DC-DC Converters
z Battery Chargers
5.0
±200 nA
z Switched-Mode and Resonant-Mode
Power Supplies
IDSS
50 µA
3 mA
z DC Choppers
z AC Motor Drives
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
19 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100128(03/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
100
160
S
Ciss
Coss
Crss
28
1770
125
nF
pF
pF
td(on)
tr
td(off)
tf
37
38
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 80A
105
25
RG = 1Ω (External)
Qg(on)
Qgs
335
123
56
nC
nC
nC
(M4 screws (4x) supplied)
VGS = 10V, VDS = 0.5 • VDSS, ID = 80A
Qgd
RthJC
RthCS
0.138 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
160
640
1.3
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 60A, VGS = 0V, Note 1
IF = 80A, VGS = 0V
trr
QRM
200 ns
µC
1.09
13
-di/dt = 100A/µs
VR = 75V
IRM
A
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN160N30T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
160
140
120
100
80
300
250
200
150
100
50
VGS = 10V
7V
VGS = 10V
7V
6V
6V
5.5V
60
5.5V
40
20
5V
5V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
2
4
6
8
10
12
14
16
18
20
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 80A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
160
140
120
100
80
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
7V
VGS = 10V
6V
5V
I D = 160A
I D = 80A
60
40
20
0
-50
-25
0
25
50
75
100
125
0
1
2
3
4
5
6
7
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 80A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
140
120
100
80
VGS = 10V
TJ = 125ºC
60
40
TJ = 25ºC
20
0
0
40
80
120
160
200
240
280
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
300
250
200
150
100
50
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
60
40
20
0
0
0
0
1
20
40
60
80
100 120 140 160 180 200
3.0
0.0
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
1.4
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 150V
I
I
D = 80A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.2
0.4
0.6
0.8
1.0
1.2
50
100
150
200
250
300
350
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
100
10
= 1 MHz
f
C
iss
RDS( ) Limit
on
25µs
C
oss
100µs
TJ = 150ºC
TC = 25ºC
Single Pulse
1ms
C
rss
1
5
10
15
20
25
30
35
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
VDS - Volts
IXYS REF: F_160N30T (9E)03-23-09
IXFN160N30T
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_160N30T (9E)03-23-09
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