IXFN24N100F [IXYS]
HiPerRF Power MOSFETs; HiPerRF功率MOSFET
| 型号： | IXFN24N100F |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerRF Power MOSFETs |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiPerRFTM
IXFN 24N100F
VDSS = 1000 V
ID25
RDS(on)
=
=
24 A
0.39 Ω
Power MOSFETs
F-Class: MegaHertz Switching
D
N-Channel Enhancement Mode
t ≤ 250 ns
Avalanche Rated, Low Q Low Intrinsic R
rr
g,
g
G
High dV/dt, Low t
rr
S
S
Symbol
TestConditions
MaximumRatings
miniBLOC,SOT-227B
E153432
VDSS
VDGR
T
T
= 25°C to 150°C
1000
1000
V
V
J
J
S
= 25°C to 150°C; R = 1 MΩ
GS
G
VGS
Continuous
Transient
±20
±3
V
VGSM
0
V
S
ID25
T
= 25°C
24
A
C
D
IDM
IAR
T
= 25°C, pulse width limited by T
= 25°C
96
24
A
A
C
JM
T
C
G = Gate
S = Source
D = Drain
EAR
T
= 25°C
60
3
mJ
C
EAS
T
= 25°C
.0
J
C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V
,
10
V/ns
W
S
DM
DD
DSS
T
≤ 150°C, R = 2 Ω
J
G
PD
T
= 25°C
600
C
Features
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
l
RF capable MOSFETs
-55 ... +150
l
Double metal process for low gate
resistance
UnclampedInductiveSwitching(UIS)
rated
TJ
1.6 mm (0.63 in) from case for 10 s
-
°C
l
VISOL
50/60 Hz, RMS
≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
l
I
ISOL
Low package inductance
- easy to drive and to protect
Fast intrinsicrectifier
Md
Mountingtorque
Terminalconnectiontorque
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
l
Weight
3
0
g
Applications
l
DC-DC converters
l
Switched-modeandresonant-mode
power supplies, >500kHz switching
Symbol
TestConditions
CharacteristicValues
(T = 25°C, unless otherwise specified)
l
DC choppers
J
l
min. typ. max.
Pulsegeneration
l
Laserdrivers
VDSS
V
V
= 0 V, I = 1 mA
1000
3.0
V
V
GS
DS
D
VGH(th)
= V , I = 8 mA
5.5
Advantages
GS
D
IGSS
IDSS
V
= ±20 V , V = 0
±200 nA
GS
DC
DS
l
Easy to mount
l
V
V
= V
T = 25°C
100 µA
Space savings
mA
DS
GS
DSS
J
= 0 V
= 10 V, I = 0.5 I
D25
T = 125°C
3
l
J
High power density
RDS(on)
V
GS
D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.39
Ω
© 2002 IXYS All rights reserved
98875 (1/02)
IXFN 24N100F
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min.
typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
16
24
S
Ciss
Coss
Crss
6600
760
pF
pF
pF
230
td(on)
tr
td(off)
tf
22
18
52
11
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
M4 screws (4x) supplied
RG = 1 Ω (External),
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Qg(on)
Qgs
195
40
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
Qgd
100
G30.12
H
30.30
1.186
1.193
38.00
38.23
1.496
1.505
RthJC
RthCK
0.21 K/W
K/W
J
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
K
0.05
L
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
M
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
Q
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
U
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
24
96
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
250 ns
QRM
IRM
1.4
10
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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