IXFN48N50QD2 [IXYS]
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4;
| 型号： | IXFN48N50QD2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 |
| 文件： | 总5页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID (cont)
RDS(on)
trr
HiPerFETTM
500 V
500 V
44 A
48 A
0.12 Ω 35 ns
0.10 Ω 35 ns
IXFN44N50QD2 IXFN44N50QD3
IXFN48N50QD2 IXFN48N50QD3
Power MOSFETs
3
3
D2
D3
Buck & Boost Configurations for
PFC & Motor Control Circuits
4
PreliminaryDataSheet
2
2
4
1
1
Symbol
TestConditions
Maximum Ratings
miniBLOC, SOT-227 B
VDSS
VDGR
TJ
TJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
1
2
VGS
VGSM
Continuous
Transient
20
30
V
V
ID25
TC
= 25°C
44N50
48N50
44
48
A
A
4
3
IDM
TC
= 25°C,
44N50
48N50
176
192
48
60
15
A
A
A
Features
pulse width limited by max. TJM
• Popular Buck & Boost circuit
topologies
IAR
TC
= 25°C
• International standard package
miniBLOC SOT-227B
EAR
Repetitive
mJ
• Aluminium nitride isolation
- high power dissipation
dv/dt
IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
V/ns
• Isolation voltage 3000 V~
• Low RDS (on) HDMOSTM process
PD
TC
= 25°C
500
600
W
V
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
(<60 pF)
VRRM
IFAVM
IFRM
Tc
= 70°C; rectangular, d = 0.5
60
A
A
- reduced RFI
• Ultra-fast FRED diode with soft
reverse recovery
tp <10 µs; pulse width limited by TJ
800
PD
TC = 25°C
180
W
Applications
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Power factor controls and buck
regulators
• DC servo and robotic drives
• DC choppers
• Switch reluctance motor controls
VISOL
50/60 Hz, RMS t = 1 min
ISOL ≤ 1 mA t = 1 s
2500
3000
V~
V~
I
Advantages
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• Easy to mount with 2 screws
• Space savings
Weight
30
g
• Tightly coupled FRED
© 2003 IXYS All rights reserved
DS99072(7/03)
IXFN44N50QD2 IXFN48N50QD2
IXFN44N50QD3 IXFN48N50QD3
Symbol
TestConditions
Characteristic Values
Dimensions
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
500
2
V
V
4
IGSS
IDSS
VGS = 20 VDC, VDS = 0
VDS = 0.8 VDSS
200
nA
T = 25°C
400
2
µA
VGS = 0 V
TJJ = 125°C
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
44N50
48N50
0.12
0.10
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
M4 screws (4x) supplied
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Dim.
Millimeter
Inches
VDS = 10 V, ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
42
S
Min.
Max.
Min.
Max.
A
B
31.5
7.8
31.88
8.2
1.240
0.307
1.255
0.323
Ciss
Coss
Crss
7000
960
230
pF
pF
pF
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
F
4.09
4.29
0.161
0.587
0.169
0.595
14.91
15.11
td(on)
tr
td(off)
tf
33
22
75
10
ns
ns
ns
ns
G
30.1
30.3
1.186
1.193
H
38.0
38.2
1.497
1.505
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 Ω (External)
J
11.7
8.9
12.2
9.6
0.460
0.351
0.481
0.378
K
L
0.75
0.85
0.030
0.033
M
12.6
12.8
0.496
0.506
N
25.2
1.98
4.95
25.4
2.13
6.0
0.990
0.078
0.195
1.001
0.084
0.235
Qg(on)
Qgs
Qgd
190
40
86
nC
nC
nC
O
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
P
RthJC
RthCK
0.26
K/W
K/W
0.05
Ultra-fast Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IR
TestConditions
TJ= 25°C; VR= VRRM
VR= 0.8VRRM
200
100
µA
µA
TJ= 125°C; VR= 0.8VRRM
14 mA
VF
IF = 70A, VGS = 0 V, TJ= 150°C
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 % TJ= 25°C
1.5
1.8
V
V
trr
IRM
II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C
IF= 60A, di/dt = -480 A/µs, VR = 350 V, TJ = 100°C
35
19
50
21
ns
A
RthJC
RthJK
0.7 K/W
K/W
0.05
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN44N50QD2 IXFN48N50QD2
IXFN44N50QD3 IXFN48N50QD3
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
48
42
36
30
24
18
12
6
120
VGS = 10V
VGS = 10V
7V
8V
7V
90
6V
5V
60
6V
30
5V
0
0
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
48
42
36
30
24
18
12
6
2.8
2.6
2.4
2.2
2
VGS = 10V
VGS = 10V
7V
6V
1.8
1.6
1.4
1.2
1
ID = 48A
ID = 24A
5V
0.8
0.6
0.4
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
54
48
42
36
30
24
18
12
6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0.7
0
12 24 36 48 60 72 84 96 108 120
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXFN44N50QD2 IXFN48N50QD2
IXFN44N50QD3 IXFN48N50QD3
Fig. 8. Transconductance
Fig. 7. Input Admittance
80
60
54
48
42
36
30
24
18
12
6
70
60
TJ = -40ºC
50
25ºC
125ºC
40
30
20
10
0
TJ = 125ºC
25ºC
-40ºC
0
3.5
4
4.5
5
5.5
6
6.5
0
6
12 18 24 30 36 42 48 54 60
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-
Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
VDS = 250V
ID = 24A
G = 10mA
I
TJ = 125ºC
TJ = 25ºC
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
20 40 60 80 100 120 140 160 180 200
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
1000
100
1
f = 1MHz
C
iss
C
C
oss
rss
30
0.1
0.01
0
5
10
15
20
25
35
40
1
10
100
1000
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN44N50QD2 IXFN48N50QD2
IXFN44N50QD3 IXFN48N50QD3
160
A
140
4000
nC
80
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF
IRM
Qr
40
20
0
A/µs
-diF/dt
0
1
2
V
100
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
2.0
1.5
140
20
V
4
µs
ns
130
VFR
tfr
trr
15
10
5
3
2
1
0
Kf
120
110
100
90
1.0
0.5
0.0
80
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
1
K/W
0.1
ZthJC
0.01
0.001
DSEP 60-06A
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
© 2003 IXYS All rights reserved
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