IXFP7N100P [IXYS]
Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFP7N100P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar TM HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 7A
RDS(on) ≤ 1.9Ω
IXFA7N100P
IXFP7N100P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
1000
1000
V
V
G
S
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
D (Tab)
TO-220AB (IXFP)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
7
A
A
18
IA
TC = 25°C
TC = 25°C
7
A
EAS
300
mJ
G
D
D (Tab)
= Drain
S
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
300
G = Gate
D
S = Source
Tab = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
TL
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
TSOLD
Md
Mounting Torque
(TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z Space Savings
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS= 0V
1000
V
V
3.0
6.0
Applications
±100 nA
z Switch-Mode and Resonant-Mode
Power Supplies
IDSS
15 μA
1.0 mA
z DC-DC Converters
z Laser Drivers
TJ = 125°C
z AC and DC Motor Drives
z Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.9
Ω
DS99924A(10/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA7N100P
IXFP7N100P
Symbol
Test Conditions
Characteristic Values
TO-263 (IXFA) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
3.6
6.0
S
RGi
Gate Input Resistance
1.8
Ω
Ciss
Coss
Crss
2590
158
26
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
td(on)
tr
td(off)
tf
25
49
42
44
ns
ns
ns
ns
2. Collector
3. Emitter
4. Collector
Bottom
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Side
RG = 10Ω (External)
Qg(on)
Qgs
47
21
21
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
Qgd
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
RthJC
RthCS
0.42 °C/W
°C/W
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
TO-220
0.50
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
TO-220 (IXFP) Outline
IS
VGS = 0V, Note1
7
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
28
1.3
trr
QRM
IRM
300
ns
μC
A
IF = 3.5A, -di/dt = 100A/μs
0.4
4.0
VR = 100V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA7N100P
IXFP7N100P
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
7
6
5
4
3
2
1
0
14
12
10
8
VGS = 10V
8V
VGS = 10V
8V
7V
7V
6
4
6V
5V
6V
5V
2
0
0
0
0
2
4
6
8
10
12
14
27
14
0
5
10
15
20
25
30
35
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
7
6
5
4
3
2
1
0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
8V
VGS = 10V
7V
6V
I D = 7A
I D = 3.5A
5V
-50
-25
0
25
50
75
100
125
3
6
9
12
15
18
21
24
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 3.5A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VGS = 10V
TJ = 125ºC
TJ = 25ºC
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFA7N100P
IXFP7N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
14
12
10
8
14
12
10
8
TJ = - 40ºC
TJ = 125ºC
25ºC
25ºC
- 40ºC
125ºC
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
16
70
10
4.0
0.4
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
30
25
20
15
10
5
16
14
12
10
8
VDS = 500V
I
I
D = 3.5A
G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0
0
10
20
30
40
50
60
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1.00
0.10
0.01
10,000
1,000
100
= 1 MHz
f
C
iss
C
oss
C
rss
10
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_7N100P(56)9-16-08
相关型号：
IXFP7N60P3
Power Field-Effect Transistor, 7A I(D), 600V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
IXYS
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