IXFT15N100Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFT15N100Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
PowerMOSFETs
Q-Class
IXFH 15N100Q
IXFK 15N100Q
IXFT 15N100Q
VDSS
ID25
= 1000 V
=
=
15 A
RDS(on)
0.7 Ω
trr ≤ 250 ns
N-ChannelEnhancementMode
AvalancheRated, LowQg,Highdv/dt
TO-247 AD (IXFH)
Preliminary data sheet
Symbol
TestConditions
Maximum Ratings
(TAB)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
1000
V
V
TO-268 (D3) ( IXFT)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
15
60
15
A
A
A
G
S
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
TO-264 AA (IXF
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
PD
TC = 25°C
360
W
G
D
S
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
D (TAB)
G = Gate
S = Source
TAB = Drain
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°C
Md
TO-247 1.13/10 Nm/lb.in.
TO-264
0.9/6 Nm/lb.in.
Weight
Symbol
TO-247
TO-268
TO-264
6
4
10
g
g
g
Features
z IXYS advanced low Qg process
z International standard packages
z
Epoxy meet UL 94 V-0, flammability
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
classification
z Low RDS (on) low Qg
min. typ. max.
z Avalanche energy and current rated
z Fast intrinsic rectifier
VDSS
VGS = 0 V, ID = 250 µA
1000
3.0
V
V
VGS(th)
VDS = VGS, ID = 4 mA
5.0
Advantages
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 µA
z
Easy to mount
Space savings
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
z
2
mA
z
High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
0.7
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2001 IXYS All rights reserved
98627A (9/01)
IXFH 15N100Q IXFK 15N100Q
IXFT 15N100Q
TO-247 AD (IXFH) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
7
12
S
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Ciss
Coss
Crss
4500
410
pF
pF
pF
150
td(on)
tr
td(off)
tf
28
27
67
14
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
RG = 2.0 Ω (External),
Min.
Max.
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Qg(on)
Qgs
130 170 nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
31
67
nC
nC
Qgd
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.35 K/W
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
TO-247
TO-264
0.25
0.15
K/W
K/W
P
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Q
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-264 AA Outline
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
15
A
A
ISM
Repetitive; pulse width limited by TJM
60
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
250
ns
µC
A
QRM
IRM
1
9
IF = IS -di/dt = 100 A/µs, VR = 100 V
Millimeter
Dim.
Inches
Max.
.202
Min.
Max.
Min.
.190
A
4.82
2.54
2.00
5.13
2.89
2.10
A1
A2
.100
.079
.114
.083
TO-268 Outline
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
相关型号：
©2020 ICPDF网 联系我们和版权申明