首页 > IXFV26N50PS

IXFV26N50PS

更新时间：2024-09-18 02:40:05

品牌：IXYS

描述：Avalanche Rated Fast Instrinsic Diode

PDF下载

中文翻译

PCB计价

概述
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXFV26N50PS 概述

Avalanche Rated Fast Instrinsic Diode 额定雪崩禀快速二极管 MOS管

IXFV26N50PS 数据手册

通过下载IXFV26N50PS数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

PolarHV^TM

Power MOSFET

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

V_DSS= 500 V

I_D2526 A

R_DS(on)≤ 230 mΩ

t_rr≤ 200 ns

Avalanche Rated

Fast Instrinsic Diode

PreliminaryDataSheet

Symbol

TestConditions

Maximum Ratings

TO-247 (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuos

Transient

D (TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

PLUS220 (IXFV)

E_AR

E_AS

1.0

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

D (TAB)

P_D

T_C= 25°C

400

PLUS220SMD (IXFV_S)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.062 in.) from case for 10 s

Plastic body

300

260

°C

D (TAB)

M_d

Mounting torque

Mounting force

TO-3P

(TO-247)

1.13/10 Nm/lb.in.

F_C

(PLUS220SMD)

11..65/2.5..15

N/lb

G = Gate

S = Source

D = Drain

TAB = Drain

Weight

PLUS220 & PLUS220SMD

Features

^zInternational standard packages

^zFast intrinsic diode

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zUnclamped Inductive Switching (UIS)

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V_DC, V_DS= 0

500

rated

^zLow package inductance

- easy to drive and to protect

3.0

5.0

100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

Easy to mount

T_J= 125°C

250

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

230 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99276A(09/05)

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

Symbol

g_fs

TestConditions

Characteristic Values

TO-247 AD (IXFH) Outline

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

V_DS= 20 V; I_D= 0.5 I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

3600

370

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 I_D25

R_G= 4 Ω (External)

Dim.

Millimeter

Min. Max.

Inches

Min.

Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185

.087

.059

.209

.102

.098

Q_g(on)

Q_gs

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040

.065

.113

.055

.084

.123

Q_gd

20.80

15.75

21.46

16.26

.016

.819

.610

.031

.845

.640

R_thJC

R_thCK

0.31

K/W

0.21

5.20

19.81

5.72

20.32

4.50

0.205

.780

0.225

.800

.177

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

∅P

3.55

5.89

3.65

6.40

.140

0.232

.144

0.252

Symbol

I_S

TestConditions

4.32

6.15 BSC

5.49

.170

242 BSC

.216

V_GS= 0 V

104

1.5

I_SM

Repetitive

PLUS220 (IXFV) Outline

V_SD

I_F= I_S, V_GS= 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

I_F= 25A, -di/dt = 100 A/µs

300

3.3

Q_RM

V_R= 100V

µC

PLUS220SMD (IXFV_S) Outline

3X b

2X e

Terminals: 1 - Gate

3 - Source

2 - Drain

TAB - Drain

2X b

Terminals: 1 - Gate

3 - Source

2 - Drain

TAB - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered by

oneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728 B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

Fig. 1. Output Characteristics

Fig. 2. Extended Output Characteristics

@ 25 C

= 10V

5.5V

4.5V

12 15 18 21 24 27 30

V_{D S}- Volts

Fig. 3. Output Characteristics

@ 125

Fig. 4. R_DS(onNormalized to 0.5 I_D25

Value vs. Junction Temperature

)

3.1

2.8

2.5

2.2

1.9

1.6

1.3

= 10V

5.5V

= 26A

= 13A

0.7

0.4

4.5V

8 10 12 14 16 18 20

V_{D S}- Volts

-50

-25

100 125 150

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to

0.5 I_D25Value vs. I_D

Fig. 6. Drain Current vs. Case

Temperature

3.4

= 10V

T = 125∫C

2.6

2.2

1.8

1.4

T = 25∫C

0.6

10 15 20 25 30 35 40 45 50 55 60

I _D- Amperes

-50

-25

T_C- Degrees Centigrade

100 125 150

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

Fig. 8. Transconductance

Fig. 7. Input Admittance

T = -40∫C

25∫C

125∫C

T = 125∫C

25∫C

-40∫C

3.5

4.5

5.5

6.5

V_{G S}- Volts

I _D- Amperes

Fig. 9. Source Current vs.

Source-To-Drain Voltage

Fig. 10. Gate Charge

= 250V

= 13A

= 10mA

T = 125∫C

T = 25∫C

0.4

0.5

0.6

0.7

0.8

0.9

10 20 30 40 50 60 70 80 90 100

V_{S D}- Volts

Q _G- nanoCoulombs

Fig. 12. Forward-Bias

Safe Operating Area

Fig. 11. Capacitance

100

10000

1000

100

Limit

DS(on)

iss

25µs

100µs

oss

rss

1ms

10ms

T = 150∫C

= 25∫C

f = 1MHz

100

1000

V_{D S}- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

Fig. 13. Maximum Transient Thermal Resistance

1.00

0.10

0.01

0.1

100

1000

Pulse Width - milliseconds

IXFV26N50PS 替代型号

型号	制造商	描述	替代类型	文档
IXFH26N55Q	IXYS	HiPerFET Power MOSFETs Q-Class	功能相似
IXTT26N50P	IXYS	Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met	功能相似

IXFV26N50PS 相关器件

型号	制造商	描述	价格	文档
IXFV26N60P	IXYS	N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated	获取价格
IXFV26N60PS	IXYS	N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated	获取价格
IXFV30N50P	IXYS	PolarHV HiPerFET Power MOSFET	获取价格
IXFV30N50PS	IXYS	PolarHV HiPerFET Power MOSFET	获取价格
IXFV30N60P	IXYS	PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode	获取价格
IXFV30N60PS	IXYS	PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode	获取价格
IXFV36N50P	IXYS	PolarHV HiPerFET Power MOSFET	获取价格
IXFV36N50PS	IXYS	PolarHV HiPerFET Power MOSFET	获取价格
IXFV52N30P	IXYS	PolarHT Power MOSFET HiPerFET	获取价格
IXFV52N30PS	IXYS	PolarHT Power MOSFET HiPerFET	获取价格