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IXGA12N60CD1 [IXYS]

HiPerFAST IGBT Lightspeed Series; HiPerFAST IGBT系列光速
IXGA12N60CD1
型号： IXGA12N60CD1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFAST IGBT Lightspeed Series
HiPerFAST IGBT系列光速

双极性晶体管
文件： 总2页 (文件大小：74K)
中文：  中文翻译
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HiPerFASTTM IGBT  
LightspeedTM Series  
IXGA 12N60CD1  
IXGP 12N60CD1  
VCES = 600 V  
IC25 = 24 A  
VCE(sat) = 2.7 V  
= 55 ns  
t
fi(typ)  
Symbol  
TestConditions  
Maximum Ratings  
TO-263(IXGA)  
VCES  
VCGR  
T
T
= 25°C to 150°C  
600  
600  
V
V
J
J
G
= 25°C to 150°C; R = 1 MΩ  
GE  
E
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
T
= 25°C  
24  
12  
48  
A
A
A
C
T
= 90°C  
C
TO-220 AB  
(IXGP)  
T
= 25°C, 1 ms  
C
SSOA  
V
= 15 V, T = 125°C, R = 33 Ω I = 24  
A
GE  
VJ  
G
CM  
(RBSOA)  
Clamped inductive load, L = 300 µH  
@ 0.8 V  
CES  
PC  
T
= 25°C  
100  
W
C
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Features  
Weight  
4
g
• Very high frequency IGBT  
• New generation HDMOS process  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
TM  
• Internationalstandardpackage  
JEDEC TO-220AB and TO-263AA  
• Highpeakcurrenthandlingcapability  
Applications  
Symbol  
TestConditions  
Characteristic Values  
• PFCcircuit  
• AC motor speed control  
• DC servo and robot drives  
• Switch-modeandresonant-mode  
power supplies  
(T = 25°C, unless otherwise specified)  
J
min. typ. max.  
BVCES  
VGE(th)  
I
= 250 µA, V = 0 V  
600  
2.5  
V
V
C
GE  
I
= 250 µA, V = V  
5.0  
C
GE  
GE  
• Highpoweraudioamplifiers  
ICES  
V
V
= 0.8 V  
= 0 V  
T = 25°C  
200 µA  
1.5 mA  
CE  
GE  
CES  
J
T = 125°C  
J
Advantages  
IGES  
V
= 0 V, V = ±20 V  
±100 nA  
CE  
GE  
• Fastswitchingspeed  
• High power density  
VCE(sat)  
I
= I , V = 15 V  
2.1  
2.7  
V
C
CE90  
GE  
98513C (2/02)  
© 2002 IXYS All rights reserved  
IXGA 12N60CD1  
IXGP 12N60CD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
TO-220AB(IXGP)Outline  
J
min. typ. max.  
I
= I ; V = 10 V,  
5
11  
S
C
C90  
CE  
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
860  
pF  
V
= 25 V, V = 0 V, f = 1 MHz  
100  
pF  
CE  
GE  
15  
pF  
Qg  
32  
10  
10  
nC  
nC  
nC  
Qge  
Qgc  
I = I , V = 15 V, V = 0.5 V  
C C90 GE CE CES  
td(on)  
tri  
td(off)  
tfi  
20  
20  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
I = I , V = 15 V, L = 300 µH  
C
C90  
GE  
A
B
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
V
= 0.8 V , R = R = 18 Ω  
CE  
CES  
G
off  
60  
ns  
C
D
9.91 10.66 0.390 0.420  
Remarks:Switchingtimesmayincreasefor  
(Clamp) > 0.8 V , higher T or  
increasedR  
55  
ns  
3.54  
4.080.139 0.161  
V
CE  
CES  
J
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.180.100 0.125  
Eoff  
0.09  
mJ  
G
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
td(on)  
tri  
20  
20  
ns  
ns  
Inductive load, TJ = 125°C  
J
0.64  
2.54  
1.01 0.025 0.040  
I = I , V = 15 V, L = 300 µH  
K
BSC 0.100  
BSC  
C
C90  
GE  
Eon  
td(off)  
tfi  
0.5  
mJ  
ns  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
V
= 0.8 V , R = R = 18 Ω  
CE  
CES  
G
off  
85 180  
85 180  
Remarks:Switchingtimesmayincreasefor  
(Clamp) > 0.8 V , higher T or  
increasedR  
Q
R
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
ns  
V
CE  
CES  
J
Eoff  
0.27 0.60 mJ  
1.25 K/W  
G
TO-263AA(IXGA)Outline  
RthJC  
RthCK  
IGBT  
0.25  
K/W  
ReverseDiode(FRED)  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
J
Symbol  
VF  
TestConditions  
I = 15A; T = 150°C  
min. typ. max.  
1.7  
2
V
V
F
VJ  
T
=
25°C  
2.5  
2.5  
VJ  
IRM  
V = 100 V; I =25A; -di /dt = 100 A/µs  
A
R
F
F
L < 0.05 µH; T = 100°C  
VJ  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
trr  
I = 1 A; -di/dt = 50 A/µs;  
F
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
V = 30 V T = 25°C  
35  
ns  
R
J
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
Diode  
1.6 K/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
Min. Recommended Footprint  
E
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
E1  
e
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  

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