IXGA7N60BD1 [IXYS]
HiPerFAST IGBT with Diode; HiPerFAST IGBT与二极管
| 型号： | IXGA7N60BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Diode |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFASTTM IGBT
withDiode
VCES
IC25
VCE(sat)
tfi
= 600 V
= 14 A
= 2.0 V
= 150ns
IXGA 7N60BD1
IXGP 7N60BD1
Symbol
TestConditions
Maximum Ratings
TO-220AB(IXGP)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
14
7
A
A
A
TO-263AA(IXGA)
TC = 90°C
TC = 25°C, 1 ms
56
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 18 Ω
Clamped inductive load @ 0.8 VCES
ICM = 14
A
G
E
C (TAB)
PC
TC = 25°C
80
W
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
• International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
Md
Mounting torque, (TO-220)
M3
M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
- drive simplicity
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
V
5.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
100 µA
750 µA
Advantages
• High power density
• Suitable for surface mounting
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
±100 nA
VCE(sat)
1.8
2.0
V
© 2002 IXYS All rights reserved
DS98977(12/02)
IXGA 7N60BD1
IXGP 7N60BD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 AB Outline
IC = IC90; VCE = 10 V,
3
7
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
500
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
17
Qg
25
15
10
nC
nC
nC
Pins:
1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
td(off)
tfi
10
ns
ns
ns
ns
Inductive load, TJ = 25°C
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
10
IC = IC90, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 18 Ω
C
D
9.91 10.66 0.390 0.420
100 200
150 250
3.54
4.08 0.139 0.161
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
Eoff
0.3
0.6 mJ
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
J
K
0.64
2.54
1.01 0.025 0.040
td(on)
tri
10
15
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
BSC 0.100
BSC
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
Eon
td(off)
tfi
0.15
200
250
0.6
mJ
ns
VCE = 0.8 • VCES, RG = Roff = 18 Ω
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
TO-263 AA Outline
Eoff
mJ
RthJC
RthCK
IGBT
1.56 K/W
K/W
0.50
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 10A; TVJ = 150°C
1.96
2.95
V
V
TVJ 25°C
=
1. Gate
IRM
V = 100 V; I =25A; -diF/dt = 100 A/µs
L R< 0.05 µH;F TVJ = 100°C
2
2.5
V
2. Collector
3. Emitter
4. Collector
BottonSide
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
35
ns
Dim.
Millimeter
Inches
Min.
Min.
Max.
Max.
RthJC
Diode
1.6 K/W
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
Min.RecommendedFootprint
(Dimensions in inches and mm)
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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