IXGE200N60B_04 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGE200N60B_04 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总2页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGE 200N60B
VCES
IC25
= 600 V
= 160 A
HiPerFASTTM IGBT
VCE(sat) = 2.3 V
tfi
= 160ns
E
ISOPLUS227TM (IXGE)
E c
Symbol
TestConditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
20
30
V
V
E c
C
IC25
IL
IC90
ICM
TC = 25°C
Terminal Current Limit(RMS)
TC = 90°C
160
100
96
A
A
A
A
G = Gate, E = Emitter, C = Collector
c
either emitter terminal can be
used as Main or Kelvin Emitter
TC = 25°C, 1 ms
400
SSOA
V
= 15 V, T = 125°C, RG = 2.4 Ω
ICM = 200
A
(RBSOA)
CGlaE mped indVuJctive load @ 0.8 VCES
Features
•Conforms to SOT-227B outline
•Isolation voltage 3000 V~
•Very high current, fast switching IGBT
PC
TC = 25°C
416
W
TJ
TJM
Tstg
-40 ... +150
150
-40 ... +150
°C
°C
°C
•Low VCE(sat)
- for minimum on-state conduction
losses
VISOL
50/60 Hz
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
I
•MOS Gate turn-on
- drive simplicity
Md
Mounting torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
•Low collector-to-case capacitance
Terminal connection torque (M4)
(< 50 pF)
Weight
19
g
•Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
Symbol
TestConditions
Characteristic Values
•AC motor speed control
•DC servo and robot drives
•DC choppers
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 1 mA , VGE = 0 V
IC = 1 mA, VCE = VGE
600
2.5
V
V
•Uninterruptible power supplies (UPS)
5.5
•Switch-mode and resonant-mode
power supplies
ICES
VCE = V
T = 25°C
TJJ = 125°C
200
2
µA
VGE = 0CVES
mA
Advantages
•Easy to mount with 2 screws
•Space savings
IGES
VCE = 0 V, VGE = 20 V
IC = 120A, VGE = 15 V
400
2.3
nA
V
VCE(sat)
•High power density
DS98911B(09/04)
© 2004 IXYS All rights reserved
IXGE 200N60B
Symbol
gfs
TestConditions
Characteristic Values
SOT-227BminiBLOC
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
IC = 60 A; VCE = 10 V,
50
75
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
11000
680
190
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
350
72
131
nC
nC
nC
IC = 120A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
Eon
td(off)
60
45
2.4
200
ns
ns
mJ
Inductive load, TJ = 25°C
IC = 100A, V = 15 V
VCE = 0.8 VCGEES, RG = Roff = 2.4 Ω
360 ns
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 • V
,
tfi
Eoff
160
5.5
280 ns
9.6 mJ
hiCgEher TJ or increaseCdESRG
td(on)
tri
Eon
td(off)
tfi
60
60
4.8
290
250
8.7
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC =100A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
Remarks: Switching times
may increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
Please see IXGN200N60B data
sheet for characteristic curves.
RthJC
RthCK
0.3 K/W
K/W
0.07
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
oneormoreofthefollowingU.S.patents:
相关型号：
IXGF20N250
Insulated Gate Bipolar Transistor, 23A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAC-3
IXYS
IXGF20N250
Insulated Gate Bipolar Transistor, 23A I(C), 2500V V(BR)CES, N-Channel, I4PAC-3
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明