IXGF25N250 [IXYS]
High Voltage IGBT For Capacitor Discharge Applications; 高电压IGBT电容器放电应用
| 型号： | IXGF25N250 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT For Capacitor Discharge Applications |
| 文件： | 总5页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 2500V
IC25 = 30A
VCE(sat) ≤ 2.9V
High Voltage IGBT
For Capacitor Discharge
Applications
IXGF25N250
( Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
2500
2500
V
V
1
2
TJ = 25°C to 150°C, RGE = 1MΩ
5
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
ISOLATED TAB
5 = Collector
1 = Gate
2 = Emitter
IC25
IC110
ICM
TC = 25°C
30
15
A
A
A
TC = 110°C
TC = 25°C, VGE = 20V, 1ms
200
SSOA
V
GE= 20V, TVJ = 125°C, RG = 20Ω
ICM = 240
0.5 • VCES
A
Features
(RBSOA)
Clamped Inductive Load
TC = 25°C
PC
114
W
ꢀ
UL Recognized Package
Electrically Isolated Tab
High Peak Current Capability
Low Saturation Voltage
MOS Gate Turn-On
ꢀ
ꢀ
ꢀ
ꢀ
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
TSOLD
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
- Drive Simplicity
ꢀ
ꢀ
Rugged NPT Structure
Molding Epoxies Meet UL 94 V-0
Flammability Classification
FC
Mounting Force
20..120/4.5..27
Nm/lbin.
VISOL
Weight
50/60Hz, 1 minute
2500
5
V~
g
Applications
ꢀ
Capacitor Discharge
Pulser Circuits
Symbol
Test Conditions
Characteristic Values
ꢀ
(TJ = 25°C, Unless Otherwise Specified)
Min.
2500
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250µA, VGE = 0V
V
V
Advantages
IC = 250µA, VCE = VGE
5.0
VCE = 0.8 • VCES, VGE = 0V, Note 2
50 µA
mA
ꢀ
High Power Density
Easy to Mount
TJ = 125°C
1
ꢀ
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 25A, VGE = 15V, Note 1
IC = 75A
2.9
5.2
V
V
DS99829B(05/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGF25N250
ISOPLUS i4-PakTM (HV) (IXGF) Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
VGE = 15V, VCE = 20V, Note 1
16
26
S
A
IC(ON)
240
Cies
Coes
Cres
2970
98
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
36
Qg
75
15
30
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
68
233
209
200
ns
ns
ns
ns
Resistive Switching Times
IC = 50A, VGE = 15V
VCE = 1250V, RG = 5Ω
RthJC
RthCS
RthJA
1.10 °C/W
°C/W
0.15
30
°C/W
Notes: 1. Pulse Test, t < 300µs; Duty Cycle, d < 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGF25N250
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
150
135
120
105
90
250
225
200
175
150
125
100
75
VGE = 25V
20V
VGE = 25V
20V
15V
10V
15V
10V
75
60
45
30
50
15
25
0
0
0
1
2
3
4
5
6
7
8
0
-50
4
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
200
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGE = 25V
20V
VGE = 15V
I C = 150A
15V
10V
I C = 100A
I C = 50A
60
40
20
0
0
2
4
6
8
10
12
14
16
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
10
9
VGE = 15V
TJ = - 40ºC
25ºC
125ºC
8
I C = 150A
7
6
I C = 100A
60
5
40
4
I C = 50A
20
3
0
7
8
9
10
11
12
13
14
15
16
17
5
6
7
8
9
10
11
12
13
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_25N250(5P-P528)4-21-08-E
IXGF25N250
Fig. 7. Transconductance
Fig. 8. Gate Charge
36
33
30
27
24
21
18
15
12
9
16
14
12
10
8
TJ = - 40ºC
VCE = 1250V
C = 50A
I G = 10 mA
I
25ºC
125ºC
6
4
6
2
3
0
0
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
80
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
10000
1000
100
280
240
200
160
120
80
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 10Ω
40
C
dV / dt < 10V / ns
res
10
0
0
5
10
15
20
25
30
35
40
250
500
750
1000
1250
1500
1750
2000
2250
2500
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF25N250
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
700
650
600
550
500
450
400
350
300
250
200
680
640
600
560
520
480
440
400
360
320
280
240
200
RG = 5ꢀ
RG = 5ꢀ
I C = 150A
TJ = 125ºC
VGE = 15V
VGE = 15V
V
CE = 1250V
VCE = 1250V
I C = 50A
TJ = 25ºC
25
35
45
55
65
75
85
95
105
115
125
50
60
70
80
90
100
110
120
130
140
150
TJ - Degrees Centigrade
IC - Amperes
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
245
240
235
230
225
220
215
210
205
200
195
190
220
210
200
190
180
170
160
150
140
130
120
110
700
124
680
660
640
620
600
580
560
540
520
500
480
120
116
112
108
104
100
96
t f
t
d(off) - - - -
RG = 5ꢀ, VGE = 15V
I C = 150A
I C = 50A, 150A
V
CE = 1250V
t r
t
d(on) - - - -
TJ = 125ºC, VGE = 15V
V
CE = 1250V
I C = 150A, 50A
92
88
I C = 50A
84
80
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
260
225
210
195
180
165
150
135
120
105
90
260
255
250
245
240
235
230
225
220
215
210
205
200
280
265
250
235
220
205
190
175
160
145
130
115
100
t f
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
t f
t
d(off) - - - -
250
240
230
220
210
200
190
180
170
RG = 5ꢀ, VGE = 15V
V
CE = 1250V
VCE = 1250V
TJ = 25ºC
TJ = 125ºC
I C = 150A, 50A
50
60
70
80
90
100
110
120
130
140
150
4
6
8
10
12
14
16
18
20
IC - Amperes
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_25N250(5P-P528)4-21-08-E
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