IXGH12N90C [IXYS]
HiPerFAST IGBT Lightspeed Series; HiPerFAST IGBT系列光速
| 型号： | IXGH12N90C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT Lightspeed Series |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFASTTM IGBT
IXGH 12N90C VCES = 900 V
LightspeedTM Series
IC25
= 24 A
V
CES(sat) = 3.0 V
tfi(typ) = 70 ns
Symbol
TestConditions
MaximumRatings
TO-247
VCES
VCGR
TJ = 25°C to 150°C
900
900
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TAB)
G
C
IC25
IC90
ICM
TC = 25°C
24
12
48
A
A
A
E
TC = 90°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 33 W
Clamped inductive load, L = 300 mH
ICM = 24
@ 0.8 VCES
A
PC
TC = 25°C
100
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
• Very high frequency IGBT
• New generation HDMOSTM process
• Internationalstandardpackage
JEDEC TO-247
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight
6
g
• Highpeakcurrenthandlingcapability
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VGE = VGE
600
2.5
V
V
• Highpoweraudioamplifiers
5.0
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
100 mA
1.5 mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
• Fast switching speed
• High power density
VCE(sat)
IC = ICE90, VGE = 15 V
3.0
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98582(1/99)
1 - 2
IXGH 12N90C
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
5
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
780
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
15
Qg
33
10
12
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
20
20
ns
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 300 mH
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
VCE = 0.8 • VCES, RG = Roff = 22 W
135
70
200
180
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Eoff
0.32 0.70
mJ
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 22 W
Eon
td(off)
tfi
0.15
200
150
0.70
mJ
ns
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
RthJC
RthCK
1.25 K/W
K/W
0.25
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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