IXGH28N30 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGH28N30 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
IXGH 28N30
IXGT 28N30
VCES
IC25
= 300 V
= 56 A
VCE(sat)typ = 1.6 V
tfi(typ)
= 180 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-268
(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
300
300
V
TJ = 25°C to 150°C; RGE = 1 MW
V
G
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
(TAB)
IC25
IC90
ICM
TC = 25°C
56
28
A
A
A
TO-247 AD
TC = 90°C
TC = 25°C, 1 ms
112
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 56
@ 0.8 VCES
A
TAB)
G
C
PC
TC = 25°C
150
W
E
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Features
• Internationalstandardpackages
JEDEC TO-268 surface and
JEDEC TO-247 AD
• Highcurrenthandlingcapability
• Newest generation HDMOSTM
process
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
300
2.5
V
V
5
Advantages
• High power density
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
• Suitableforsurfacemounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,
(isolatedmountingscrewhole)
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
VCE(sat)
IC = IC90, VGE = 15 V
1.6
1.8
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97528A(9/98)
1 - 2
IXGH 28N30
IXGT 28N30
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
12
18
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
130
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
90
15
35
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
15
30
ns
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
130
180
0.8
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
,
Eoff
mJ
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
15
30
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Eon
td(off)
tfi
0.3
250
250
mJ
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
500 ns
600 ns
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
N
1.5 2.49 0.087 0.102
Eoff
1.5
3.0 mJ
RthJC
RthCK
0.83 K/W
K/W
0.25
TO-268AA (D3 PAK)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相关型号：
IXGH28N30AS
Insulated Gate Bipolar Transistor, 56A I(C), 300V V(BR)CES, N-Channel, TO-247SMD, 3 PIN
IXYS
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