IXGH28N60BD1 [IXYS]

Low VCE(sat) IGBT with Diode; 低VCE ( sat)的IGBT与二极管
IXGH28N60BD1
型号: IXGH28N60BD1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Low VCE(sat) IGBT with Diode
低VCE ( sat)的IGBT与二极管

二极管 双极性晶体管
文件: 总2页 (文件大小:59K)
下载:  下载PDF数据表文档文件

IXGH28N60D1

Insulated Gate Bipolar Transistor, 40A I(C), N-Channel, TO-247AD,

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0 IXYS

IXGH28N90

HIPERFAST IGBT

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24 IXYS

IXGH28N90

HIPERFAST IGBT

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11 IXYS

IXGH28N90B

HIPERFAST IGBT

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19 IXYS

IXGH28N90B

HIPERFAST IGBT

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29 IXYS

IXGH28N90B

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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0 IXYS

IXGH30B60BD1

HiPerFASTTM IGBT with Diode

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6 IXYS

IXGH30B60BD1

HiPerFASTTM IGBT with Diode

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31 IXYS

IXGH30N120B3

GenX3 1200V IGBTs

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29 IXYS

IXGH30N120B3

Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3

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0 IXYS

IXGH30N120B3D1

GenX3 1200V IGBT

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15 IXYS

IXGH30N120C3H1

GenX3 1200V IGBT

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19 IXYS

IXGH30N30

HiPerFAST IGBT

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34 IXYS

IXGH30N30S

TRANSISTOR | IGBT | N-CHAN | 250V V(BR)CES | 60A I(C) | TO-247SMD

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19 ETC

IXGH30N50

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247

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26 ETC