IXGH30N60C2 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGH30N60C2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总5页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
VCES
IC25
= 600 V
= 70 A
IXGH 30N60C2
IXGT 30N60C2
VCE(sat) = 2.7 V
tfityp
C2-Class High Speed IGBTs
= 32 ns
TO-268 (IXGT)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
G
E
C (TAB)
VGES
VGEM
Continuous
Transient
20
30
V
V
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
70
30
150
A
A
A
TO-247(IXGH)
TAB)
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
ICM = 60
A
G
C
E
190
W
G = Gate,
C = Collector,
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
E = Emitter,
TAB = Collector
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
300
°C
z
Very high frequency IGBT
Square RBSOA
250
°C
z
z
z
High current handling capability
MOS Gate turn-on
Md
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
VGE(th)
ICES
IC = 250 µA, VCE = VGE
2.5
5.0
V
z
DC choppers
VCE = V
T = 25°C
50
µA
VGE = 0CVES
TJJ = 150°C
1
100
2.7
mA
IGES
VCE = 0 V, VGE = 20 V
IC = 24 A, VGE = 15 V
nA
VCE(sat)
T = 25°C
TJJ = 25°C
V
V
2.0
© 2005 IXYS All rights reserved
DS99168A(01/05)
IXGH 30N60C2
IXGT 30N60C2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = 24 A; VCE = 10 V,
18
28
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
1430
110
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
Qg
Qge
Qgc
70
10
23
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
td(on)
tri
td(off)
tfi
13
15
70
60
ns
ns
140 ns
ns
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.29 0.30 mJ
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
13
17
ns
ns
L
.780 .800
.177
.140 .144
L1
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
∅P 3.55
Q
R
S
3.65
5.89
4.32
6.15 BSC
6.40 0.232 0.252
0.22
120
130
0.59
mJ
ns
ns
5.49
.170 .216
242 BSC
Eoff
mJ
TO-268 Outline
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
oneormoreofthefollowingU.S.patents:
6,759,692
6771478B2
IXGH 30N60C2
IXGT 30N60C2
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
270
240
210
180
150
120
90
50
45
40
35
30
25
20
15
10
5
VGE = 15V
13V
VGE = 15V
13V
11V
9V
11V
9V
7V
7V
5V
60
30
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
25
3
2
4
6
8
10
12
14 16
18
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE( ) on
sat
Temperature
50
45
40
35
30
25
20
15
10
5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGE = 15V
VGE = 15V
9V
7V
13V
11V
IC = 48A
IC = 24A
5V
IC = 12A
0
50
75
100
125
150
0.5
1
1.5
2
2.5
3
3.5
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
4.5
4
TJ = 25ºC
IC = 48A
24A
12A
3.5
3
60
TJ = 25ºC
125ºC
2.5
2
40
20
0
5
6
7
8
9
10 11 12 13 14 15 16 17
4
5
6
7
8
9
10
11
12
VG E - Volts
VG E - Volts
© 2005 IXYS All rights reserved
IXGH 30N60C2
IXGT 30N60C2
Fig. 8. Dependence of Turn-Off
Ene r gy on RG
Fig. 7. Transconductance
35
30
25
20
15
10
5
2000
1800
1600
1400
1200
1000
800
TJ = 125ºC
V
GE = 15V
VCE = 400V
IC = 48A
IC = 24A
TJ = 25ºC
125ºC
600
400
200
IC = 12A
0
0
0
20 40 60 80 100 120 140 160 180 200
5
10
15 20
25
30
35 40
45
50
I C - Amperes
R G - Ohms
Fig. 10. Dependence of Turn-Off
Energy on Temperature
Fig. 9. Dependence of Turn-Off
Ene r gy on IC
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
RG
=5Ω
RG
=5Ω
VGE = 15V
VCE = 400V
VGE = 15V
VCE = 400V
IC = 48A
TJ = 125ºC
IC = 24A
TJ = 25ºC
IC = 12A
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on RG
Fig. 12. Dependence of Turn-Off
Switching Time on IC
450
400
350
300
250
200
150
100
200
180
160
140
120
100
80
td(off)
td(off)
fi
TJ = 125ºC
VGE = 15V
VCE = 400V
tfi
RG
- - - - - -
=5Ω
t -
- - - - -
VGE = 15V
VCE = 400V
TJ = 125ºC
IC = 12A
IC = 24A
IC = 48A
60
TJ = 25ºC
35
40
5
10
15
20
25 30
35
40
45
50
10
15
20
25
30
40
45
50
R G - Ohms
I C - Amperes
IXGH 30N60C2
IXGT 30N60C2
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
Fig. 14. Gate Charge
15
12
9
180
160
140
120
100
80
VCE = 300V
IC = 24A
G = 10mA
td(off)
tfi
-
- - - - -
IC = 48A
24A
I
RG
=5Ω
VGE = 15V
VCE = 400V
12A
6
IC = 12A
24A
3
60
48A
40
0
25 35 45 55 65 75 85 95 105 115 125
0
10
20
30
40
50
60
70
TJ - Degrees Centigrade
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
1000
100
f = 1 MHz
C
ies
C
oes
C
res
10
0
5
10
15
20
25
30
35
40
VC E - Volts
Fig. 16. Maximum Transient Thermal Resistance
1.0
0.5
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
相关型号：
©2020 ICPDF网 联系我们和版权申明