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IXGH36N60B3D1 [IXYS]

GenX3 600V IGBT w/ Diode; GenX3 600V IGBT W /二极管
IXGH36N60B3D1
型号： IXGH36N60B3D1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

GenX3 600V IGBT w/ Diode
GenX3 600V IGBT W /二极管

二极管 双极性晶体管
文件： 总7页 (文件大小：174K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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GenX3TM 600V IGBT  
w/ Diode  
VCES  
IC110  
= 600V  
= 36A  
IXGH36N60B3D1  
VCE(sat) ≤ 1.8V  
Medium-Speed Low-Vsat PT IGBT  
for 5 - 40kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
G
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
C
(TAB)  
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC110  
IF110  
ICM  
TC = 110°C  
36  
30  
A
A
A
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
TAB = Collector  
TC = 25°C, 1ms  
200  
SSOA  
V
GE= 15V, TVJ = 125°C, RG = 5Ω  
ICM = 80  
A
Features  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
z Optimized for Low Conduction and  
Switching Losses  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Square RBSOA  
z Anti-Parallel Ultra Fast Diode  
z International Standard Package  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
300  
μA  
TJ =125°C  
1.75  
mA  
IGES  
VCE = 0V, VGE = ± 20V  
±100  
nA  
V
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
1.8  
DS99903B(07/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline (IXGH)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
28  
42  
S
Cies  
Coes  
Cres  
2280  
120  
32  
pF  
pF  
pF  
∅ P  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
19  
24  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Dim.  
Millimeter  
Inches  
Eon  
td(off)  
tfi  
0.54  
125  
100  
0.8  
mJ  
ns  
Min. Max.  
Min. Max.  
200  
160  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 400V, RG = 5Ω  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
1.5 mJ  
td(on)  
tri  
19  
26  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.9  
180  
170  
1.5  
mJ  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
VCE = 400V, RG = 5Ω  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IRM  
trr  
IF = 30A, VGE = 0V, Note 1  
2.8  
1.7  
V
V
TJ = 150°C  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ= 100°C  
VR = 100V  
6
A
IF = 1A, -diF/dt =100A/μs, VR = 30V  
TJ= 100°C  
25  
ns  
ns  
100  
RthJC  
0.9 °C/W  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH36N60B3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
270  
240  
210  
180  
150  
120  
90  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
60  
5V  
30  
5V  
0
0
0.0  
0.0  
5
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.4  
15  
0
2
4
6
8
10  
12  
14  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.35  
1.30  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
I C = 60A  
7V  
5V  
I C = 30A  
I C = 15A  
100  
0
0.4  
0.8  
1.2  
1.6  
2.0  
-50  
-25  
0
25  
50  
75  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
240  
220  
200  
180  
160  
140  
120  
100  
80  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
I C = 60A  
30A  
15A  
60  
40  
20  
0
6
7
8
9
10  
11  
12  
13  
14  
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
I C = 30A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
30  
60  
90  
120  
150  
180  
210  
240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dV / dt < 10V / ns  
C
res  
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_36N60B3(55) 5-05-08-C  
IXGH36N60B3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
E
E
on - - - -  
VGE = 15V  
off  
RG = 5  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Ω ,  
TJ = 125ºC  
VCE = 400V  
I C = 60A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
I C = 30A  
TJ = 25ºC  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
tf  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
CE = 400V  
V
I C = 60A  
E
E
on - - - -  
VGE = 15V  
off  
RG = 5  
I C = 15A, 30A, 60V  
I C = 30A  
Ω ,  
VCE = 400V  
I C = 15A  
95 105 115 125  
25  
35  
45  
55  
65  
75  
85  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
240  
225  
210  
195  
180  
165  
150  
135  
120  
105  
90  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
tf  
td(off)  
- - - -  
RG = 5 , VGE = 15V  
t f  
td(off) - - - -  
Ω
RG = 5 , VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
I C = 30A, 60A  
TJ = 25ºC  
I C = 15A  
75 85  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH36N60B3D1  
Fig. 19. Inductive Turn-on Switching Times  
vs. Collector Current  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
25  
tr  
td(on)  
tr  
td(on  
- - - -  
)
- - - -  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
TJ = 125ºC, VGE = 15V  
CE = 400V  
RG = 5 , VGE = 15V  
Ω
V
VCE = 400V  
TJ = 125ºC  
I C = 15A, 30A, 60A  
75  
60  
TJ = 25ºC  
45  
30  
15  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times  
vs. Junction Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
tr  
td(on)  
- - - -  
RG = 5 , VGE = 15V  
Ω
I C = 60A  
VCE = 400V  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_36N60B3(55) 5-05-08-C  
DIODE CURVES  
IXGH36N60B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
90  
20  
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
V
VFR  
15  
μs  
ns  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
800 1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Q , I  
Fig. 20. Dynamic parameters Q ,RIM  
Fig. 25. Recovery time trr versus  
-diF/dt  
Fig. 26. Peak forward voltage VFR  
and tfr versus diF/dt  
r
r
RM  
versus TVJ  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction to case  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_36N60B3(55) 5-05-08-C  

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