IXGJ40N60C2D1 [IXYS]
HiPerFASTTM IGBTs w/ Diode; HiPerFASTTM的IGBT W /二极管
| 型号： | IXGJ40N60C2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFASTTM IGBTs w/ Diode |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBTs
w/ Diode
VCES = 600V
IC110 = 40A
VCE(SAT) ≤ 2.7V
tfi(typ) = 32ns
IXGT40N60C2D1
IXGJ40N60C2D1
IXGH40N60C2D1
C2-Class High Speed IGBTs
TO-268 (IXGT)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-268 (IXGJ)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC110
TC = 25°C ( Limited by Lead)
TC = 110°C
75
40
A
A
C (Tab)
ICM
TC = 25°C, 1ms
200
A
TO-247 (IXGH)
SSOA
VGE= 15V, TJ = 125°C, RG = 10Ω
ICM = 80
A
(RBSOA)
Clamped Inductive Load
VCE ≤ VCES
PC
TC = 25°C
300
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G
C
C (Tab)
E
-55 ... +150
G = Gate
E = Emitter
C
= Collector
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Tab = Collector
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
z Very High Frequency IGBT
z Square RBSOA
z High Current Handling Capability
Applications
Symbol
Test Conditions
Characteristic Values
z Uninterruptible Power Supplies (UPS)
z Switch-Mode and Resonant-Mode
Power Supplies
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z AC Motor Speed Control
z DC Servo and Robot Drives
z DC Choppers
VCE = VCES, VGE= 0V
200 μA
mA
±100 nA
TJ = 125°C
TJ = 125°C
3
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
2.2
1.7
2.7
V
V
Advantages
z High Power Density
z Very Fast Switching Speeds for High
Frequency Applications
z High Power Surface Mountable
Packages
DS99041F(11/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 Outline
Min.
Typ.
Max.
gfs
IC = 30A, VCE = 10V, Note 1
20
36
S
Cies
Coes
Cres
2500
220
54
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
∅ P
1
2
3
Qg
Qge
Qgc
95
14
36
nC
nC
nC
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
td(off)
tfi
18
20
ns
ns
e
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
1 = Gate 2 = Collector
3 = Emitter
90
32
140 ns
ns
VCE = 400V, RG = 3Ω
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Note 2
Eoff
0.20
0.37 mJ
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
Eon
td(off)
tfi
18
20
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive load, TJ = 125°C
IC = 30A, VGE = 15V
0.60
130
80
mJ
ns
VCE = 400V, RG = 3Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
ns
Note 2
Eoff
0.50
mJ
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
RthJC
RthCS
0.42 °C/W
°C/W
TO-247 & TO-268
0.25
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
TO-268 Leaded Outline
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
2.5
V
V
TJ = 150°C
1.6
IRM
trr
TJ = 100°C
TJ = 100°C
4
A
ns
ns
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
100
25
RthJC
0.9 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
1 = Gate 2,4 = Collector
3 = Emitter
TO-268 Outline
1 = Gate 2,4 = Collector
3 = Emitter
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
60
50
40
30
20
10
210
VG E = 15V
13V
11V
VGE = 15V
13V
11V
9V
18 0
15 0
12 0
90
60
30
0
9V
7V
7V
5V
5V
0
0.5
0.5
5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
VC E - Volts
5
6
7
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
60
50
40
30
20
10
1. 3
1. 2
1. 1
1
VG E = 15V
13V
11V
9V
I C = 60A
VG E = 15V
7V
0.9
0.8
0.7
0.6
I C = 30A
I C = 15A
5V
0
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
4
3.5
3
210
18 0
15 0
12 0
90
60
30
0
º
T J = 25 C
2.5
2
I C = 60A
º
º
º
C
TJ= 125 C
30A
1 5 A
25 C
1. 5
-40
1
6
7
8
9
10
11 12 13
14 15
4
5
6
7
8
9
10
VG E - Volts
VG E - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
70
60
50
40
30
20
10
1.8
1.6
º
I C = 60A
TJ = -40 C
º
TJ = 125 C
VG E = 15V
VC E = 400V
1.4
1.2
º
25 C
º
125 C
1
I C= 45A
0.8
0.6
0.4
0.2
0
I C = 30A
I C= 15A
0
0
10
0
30
60
90
120
150
180
2
4
6
8
10
R G - Ohms
12
14
16
I C - Amperes
Fig. 10. Dependence of Eoff on Temperature
Fig. 9. Dependence of Eoff on IC
1. 6
1. 4
1. 2
1. 6
1. 4
1. 2
1
RG = 3 Ohms
RG = 10 Ohms
RG = 3 Ohms
RG= 10 Ohms
- - - - -
- - - - -
I C = 60A
VG E = 15V
VC E = 400V
VGE = 15V
VCE = 400V
1
I C = 45A
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
º
TJ = 125 C
I C = 30A
I C = 15A
º
TJ = 25 C
25
50
75
100
125
20
30 40
I C - Amperes
50
60
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
12
9
10000
10 0 0
10 0
f = 1MHz
VC E = 300V
I C = 30A
I G = 10mA
C
ies
C
oes
res
6
3
C
10
0
0
5
10
15
20
25
30
35
40
20
40
60
80
100
VC E - Volts
Q G - nanoCoulombs
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Fig. 13. MaximumTransient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
60
A
1000
nC
30
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
A
50
40
30
20
10
0
25
800
IF= 60A
IF= 30A
IF= 15A
IRM
Qr
IF
20
15
10
5
IF= 60A
IF= 30A
IF= 15A
600
400
200
0
TVJ=150°C
TVJ=100°C
TVJ=25°C
0
A/μs
1000
-diF/dt
0
1
2
3 V
100
1000
0
200
400
600
A/μs
-diF/dt
VF
Fig. 15. Reverse recovery charge Qr
versus -diF/dt
Fig. 16. Peak reverse current IRM
versus -diF/dt
Fig. 14. Forward current IF versus VF
2.0
90
20
1.00
TVJ= 100°C
IF = 30A
TVJ= 100°C
VR = 300V
V
μs
ns
VFR
tfr
trr
1.5
15
10
5
0.75
0.50
0.25
0.
tfr
Kf
IF= 60A
80
IF= 30A
IF= 15A
VFR
1.0
0.5
0.0
IRM
70
60
Qr
0
A/μs
1000
0
40
80
120
160
0
200
400
600
01000
A/μs
0
200
400
600
°C
diF/dt
TVJ
-diF/dt
Fig. 19. Peak forward voltage VFR
and tfr versus diF/dt
Fig. 17. Dynamic parameters Qr, IRM
versus TVJ
Fig. 18. Recovery time trr versus
-diF/dt
1
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
0.1
ZthJC
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
DSEP 29-06
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 20. Transient thermal resistance junction to case
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_40N60C2(5Y)12-11-06-B
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