IXGN200N60A2 [IXYS]
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4;
| 型号： | IXGN200N60A2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4 局域网 电动机控制 栅 晶体管 |
| 文件： | 总5页 (文件大小：553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGN 200N60A2 VCES
IC25
= 600 V
= 200 A
IGBT
Optimized for Switching
up to 5 kHz
VCE(sat) = 1.35 V
PreliminaryDataSheet
E
Symbol
TestConditions
Maximum Ratings
SOT-227B,miniBLOC
E c
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E c
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
200
100
400
A
A
A
C
G = Gate, C = Collector, E = Emitter
c
either emitter terminal can be used as
Main or Kelvin Emitter
SSOA
V
= 15 V, TVJ = 125°C, RG = 2.0 Ω
I
= 200
A
(RBSOA)
CGlaE mped inductive load
@C0M.8 VCES
700
PC
TC = 25°C
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard package
miniBLOC
z
Aluminium nitride isolation
- high power dissipation
VISOL
50/60 Hz
ISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
z
Isolation voltage 3000 V~
I
z
Very high current IGBT
z
Md
Mounting torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Low VCE(sat) for minimum on-state
Terminal connection torque (M4)
conduction losses
z
MOS Gate turn-on
Weight
30
g
- drive simplicity
z
Low collector-to-case capacitance
(< 50 pF)
z
Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
TestConditions
Characteristic Values
Applications
z
(TJ = 25°C, unless otherwise specified)
AC motor speed control
z
min. typ. max.
DC servo and robot drives
z
DC choppers
z
VGE(th)
ICES
IC = 1 mA, VCE = VGE
2.5
5.5
V
Uninterruptible power supplies (UPS)
z
Switch-mode and resonant-mode
VCE = V
T = 25°C
TJJ = 125°C
50
2
µA
VGE = 0CVES
mA
power supplies
Advantages
IGES
VCE = 0 V, VGE = 20 V
IC = IC110, VGE = 15 V
400
nA
V
z
Easy to mount with 2 screws
z
VCE(sat)
1.2
1.35
Space savings
z
High power density
© 2003 IXYS All rights reserved
DS99087A(11/03)
IXGN 200N60A2
Symbol
gfs
TestConditions
Characteristic Values
SOT-227BminiBLOC
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
IC = 60 A; VCE = 10 V,
70
106
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
9900
740
190
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Qg
Qge
Qgc
480
63
169
nC
nC
nC
td(on)
tri
td(off)
tfi
60
45
360
250
5
ns
ns
ns
ns
mJ
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0 Ω
Eoff
td(on)
tri
Eon
td(off)
tfi
60
60
3.0
290
660
12
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
Eoff
RthJC
RthCK
0.17 K/W
K/W
0.05
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGN 200N60A2
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
350
300
250
200
150
100
50
200
175
150
125
100
75
VGE = 15V
VGE = 15V
9V
13V
11V
13V
11V
9V
7V
7V
50
25
5V
1.25 1.5 1.75
5V
0
0
0.25 0.5 0.75
1
2
2.25
0
-50
4
0.5
1
1.5
2
2.5
3
3.5
4
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
200
175
150
125
100
75
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
IC = 200A
11V
9V
7V
5V
VGE = 15V
IC = 100A
IC = 50A
50
25
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter Voltage
Fig. 6. Input Admittance
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
350
300
250
200
150
100
50
TJ = 25ºC
TJ = 125ºC
25ºC
IC = 200A
-40ºC
100A
50A
0
5
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
4.5
5
5.5
6
6.5
7
7.5
8
VG E - Volts
© 2003 IXYS All rights reserved
IXGN 200N60A2
Fig. 7. Transconductance
Fig. 8. Dependence of E on RG
off
200
180
160
140
120
100
80
35
30
25
20
15
10
5
IC = 200A
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 100A
IC = 50A
60
40
20
0
0
0
50
0
50
100
150
200
250
300
350
0
5
10
15
20
25
I C - Amperes
R G - Ohms
Fig. 10. Dependence of E on
off
Fig. 9. Dependence of E on Ic
off
Temperature
30
25
20
15
10
5
30
25
20
15
10
5
RG = 2.4 Ω
VGE = 15V
VCE = 480V
RG = 2.4 Ω
VGE = 15V
VCE = 480V
IC = 200A
TJ = 125ºC
IC = 100A
IC = 50A
TJ = 25ºC
0
0
75
100
125
150
175
200
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
100000
10000
1000
15
12
9
f = 1 MHz
VCE = 300V
IC = 100A
IG = 10mA
C
ies
6
C
oes
3
C
res
0
100
50 100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
35
40
VC E - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGN 200N60A2
Fig. 13. Maxim um Transient Therm al Resistance
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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