IXGP20N120BD1 [IXYS]
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;
| 型号： | IXGP20N120BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage IGBT with Diode
VCES
IC25
= 1200 V
= 40 A
IXGP 20N120B
IXGP 20N120BD1
VCE(sat) = 3.4 V
tfi(typ)
= 160 ns
Preliminary Data Sheet
D1
TO-220 (IXGP)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
VGES
VGEM
Continuous
Transient
20
30
V
V
C (TAB)
G
C
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
40
20
100
A
A
A
G = Gate
C = Collector
TAB = Collector
E = Emitter
SSOA
V
= 15 V, TJ = 125°C, RG = 10 Ω
ICM = 40
A
(RBSOA)
CGlaE mped inductive load
@0.8 VCES
Features
z
International standard package
IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
PC
TC = 25°C
190
W
z
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- Rice cookers
z
z
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Md
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
260
4
°C
°C
g
Maximum tab temperature
soldering SMD devices for 10s
Advantages
z
Weight
Saves space (two devices in one
package)
z
Easy to mount with 1 screw
z
Reduces assembly time and cost
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th)
ICES
IC = 250 µA, VCE = VGE
2.5
5.0
V
VCE = V
20N120B
50 µA
VGE = 0CVES
20N120BD1
150 µA
IGES
VCE = 0 V, VGE = 20 V
100 nA
VCE(sat)
IC
= 20A, VGE = 15 V
2.9
2.8
3.4
V
V
Note 2
TJ=125°C
© 2003 IXYS All rights reserved
DS99138(12/03)
IXGP 20N120B
IXGP 20N120BD1
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 Outline
gfs
IC = 20A; VCE = 10 V,
Note 2.
12
18
S
Cies
1700
95
pF
pF
20N120B
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
20N120BD1 105
39
pF
pF
Qg
Qge
Qgc
72
12
27
nC
nC
nC
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
25
15
150
160
2.1
ns
ns
280 ns
320 ns
3.5 mJ
Inductive load, TJ = 25°C
IC = 20 A; VGE = 15 V
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
V
CE = 0.8 VCES; RG = Roff = 10 Ω
tfi
Note 1.
Eoff
td(on)
tri
Eon
td(off)
25
18
1.4
270
360
3.5
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = 20A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10 Ω
Note 1
tfi
ns
Eoff
mJ
RthJC
RthCK
0.65 K/W
K/W
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
VF
IF
IF = 10 A, VGE = 0 V
3.3
10
V
A
TC = 90°C
IRM
trr
IF = 10 A; -di /dt = 400 A/µs, VR = 600 V
VGE = 0 V; TJF= 125°C
14
A
120
ns
trr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
40
ns
RthJC
2.5 K/W
Notes: 1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased R .
,
Pulse test, t ≤ 300 µs, duGty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGP 20N120B
IXGP 20N120BD1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
40
35
30
25
20
15
10
5
160
140
120
100
80
VGE = 15V
13V
VGE = 15V
13V
11V
9V
11V
9V
7V
5V
60
40
7V
5V
20
0
0
0.5
0.5
6
1
1.5
2
2.5
3
3.5
4
4.5
0
-50
4
2
4
6
8
10 12 14 16 18 20
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
40
35
30
25
20
15
10
5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
VGE = 15V
11V
9V
IC = 40A
IC = 20A
IC = 10A
7V
5V
0
1
1.5
2
2.5
3
3.5
4
4.5
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
60
50
40
30
20
10
0
6.5
6
TJ = 25ºC
5.5
5
IC = 40A
20A
4.5
4
10A
3.5
3
TJ = 125ºC
25ºC
2.5
2
-40ºC
1.5
5
6
7
8
9
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
VG E - Volts
© 2003 IXYS All rights reserved
IXGP 20N120B
IXGP 20N120BD1
Fig. 8. Dependence of Turn-off
Energy Loss on RG
Fig. 7. Transconductance
24
21
18
15
12
9
16
14
12
10
8
TJ = 125ºC
VGE = 15V
VCE = 960V
TJ = -40ºC
25ºC
125ºC
IC = 40A
IC = 20A
6
6
4
3
2
IC = 10A
110
0
0
0
10
20
30
40
50
60
10
30
50
70
90
130
150
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy Loss on Ic
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
14
12
10
8
14
12
10
8
RG = 10Ω
RG = 100Ω - - -
VGE = 15V
VCE = 960V
TJ = 125ºC
RG = 10Ω
RG = 100Ω - - -
VGE = 15V
IC = 40A
VCE = 960V
TJ = 125ºC
6
6
IC = 20A
IC = 10A
4
4
TJ = 25ºC
2
2
0
0
25 35 45 55 65 75 85 95 105 115 125
10
15
20
25
30
35
40
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-off
Switching Time on RG
Fig. 12. Dependence of Turn-off
Switching Time on Ic
1400
1200
1000
800
550
500
450
400
350
300
250
200
td(off)
tfi
td(off)
tfi
- - - - - -
- - - - - -
TJ = 125ºC
VGE = 15V
VCE = 960V
RG = 10Ω
VGE = 15V
VCE = 960V
TJ = 125ºC
IC = 10A
IC = 40A
600
400
TJ = 25ºC
IC = 20A
70
200
10
30
50
90
110
130
150
10
15
20
25
30
35
40
R G - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGP 20N120B
IXGP 20N120BD1
30
A
1.4
nC
1.2
40
A
T = 100°C
VVRJ= 300V
T = 100°C
VVRJ= 300V
25
30
IF
1.0
0.8
0.6
0.4
0.2
0.0
IRM
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Qr
20
15
10
5
I = 20A
IFF= 5A
IF= 10A
I = 20A
IF= 10A
IFF= 5A
20
10
0
0
V
A/µs
0.0
0.5
1.0
1.5
2.0
2.5
100
1000
0
200 400 600 1000
-diF/dt
A/µs
-diF/dt
VF
Fig. 13. Forward current IF versus VF
2.0
Fig. 14. Reverse recovery charge Qr
versus -diF/dt
Fig. 15. Peak reverse current IRM
versus -diF/dt
120
20
1.2
T = 100°C
VVRJ= 300V
ns
V
µs
VFR
VFR
110
tfr
trr
1.5
Kf
15
10
5
0.9
tfr
I = 20A
IF= 10A
IFF= 5A
100
90
1.0
0.6
0.3
0.
IRM
80
0.5
Qr
T = 100°C
IFVJ = 10A
70
0.0
0
A/µs
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 16. Dynamic parameters Qr, IRM
versus TVJ
Fig. 17. Recovery time trr versus -diF/dt
Fig. 18 Peak forward voltage VFR and
tf versus diF/dt
10
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
1
2
3
1.449
0.5578
0.4931
0.0052
0.0003
0.0169
ZthJC
0.1
0.01
DSEP 8-06A/DSEC16-06A
0.001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 19. Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2003 IXYS All rights reserved
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