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元器件品牌
IXGP8N100
[IXYS]
IXGA8N100;
元器件型号：
IXGP8N100
生产厂家：
IXYS CORPORATION
描述和应用：
IXGA8N100
晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件：
总2页 (文件大小：105K)
下载文档：
下载PDF数据表文档文件
型号参数：IXGP8N100参数
查看货源
IXGQ100N100Y3
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C)
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156
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14
ETC
IXGQ100N50Y4
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 100A I(C)
Warning
: Undefined variable $rtag in
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156
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10
ETC
IXGQ100N60Y4
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
Warning
: Undefined variable $rtag in
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156
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16
ETC
IXGQ150N100Y3
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
Warning
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156
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13
ETC
IXGQ150N100Y4
Transistor
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156
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0
IXYS
IXGQ150N33TC
Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 PIN
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0
IXYS
IXGQ150N33TCD1
Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 PIN
Warning
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156
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0
IXYS
IXGQ150N60Y3
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C)
Warning
: Undefined variable $rtag in
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156
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30
ETC
IXGQ170N30PB
Insulated Gate Bipolar Transistor, 170A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN
Warning
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156
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0
IXYS
IXGQ200N100Y3
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 200A I(C)
Warning
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156
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27
ETC
IXGQ200N60Y3
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
Warning
: Undefined variable $rtag in
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156
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48
ETC
IXGQ20N120B
High Voltage IGBT with Diode
Warning
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156
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22
IXYS
IXGQ20N120BD1
High Voltage IGBT with Diode
Warning
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156
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24
IXYS
IXGQ240N30PB
Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN
Warning
: Undefined variable $rtag in
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156
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1
IXYS
IXGQ240N30PB
Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN
Warning
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156
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2
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