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IXGQ90N33TB

更新时间：2024-09-18 19:11:14
品牌：IXYS
描述：Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN

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IXGQ90N33TB 概述

Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN IGBT

IXGQ90N33TB 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-3P
包装说明：TO-3P, 3 PIN针数：2
Reach Compliance Code：compliant风险等级：5.62
外壳连接：COLLECTOR最大集电极电流 (IC)：90 A
集电极-发射极最大电压：330 V配置：SINGLE
门极发射器阈值电压最大值：5 VJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：382 ns
标称接通时间 (ton)：39 nsBase Number Matches：1

IXGQ90N33TB 数据手册

通过下载IXGQ90N33TB数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Trench Gate High  
Speed IGBT  
VCES  
ICP  
= 330V  
= 360A  
IXGQ90N33TB  
VCE(sat) ≤ 1.6V  
For PDP Applications  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TO-3P  
TJ = 25°C to 150°C  
330  
V
VGEM  
IC25  
ICP  
±30  
V
A
TC = 25°C, IGBT chip capability  
TJ ≤ 150°C, tp ≤ 1μs  
TJ ≤ 150°C, tp ≤ 1μs  
Lead current limit  
90  
360  
G
C
E
A
(TAB)  
IDP  
60  
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
IC(RMS)  
PC  
75  
A
TC = 25°C  
200  
W
°C  
°C  
°C  
°C  
°C  
TJ  
-55 ... +150  
150  
TJM  
Tstg  
Features  
-55 ... +150  
300  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
Mounting torque  
•International standard package  
•Low VCE(sat)  
TSOLD  
Md  
260  
- for minimum on-state conduction  
losses  
1.13/10 Nm/lb.in.  
5.5 g  
Weight  
TO-3P  
•Fast switching  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
330  
3.0  
Typ.  
Max.  
• PDP Screen Drivers  
BVCES  
VGE(th)  
ICES  
IC = 250μA , VGE = 0V  
IC = 250μA , VCE = VGE  
V
V
5.0  
VCE = 330V  
VGE= 0V  
1
μA  
μA  
TJ = 125°C  
200  
IGES  
VCE= 0V, VGE = ±20V  
±200  
nA  
VCE(sat)  
VGE = 15V, IC = 45A  
1.33  
1.31  
1.61  
1.71  
1.60  
V
V
TJ = 125°C  
TJ = 125°C  
IC = 90A  
V
V
© 2008 IXYS CORPORATION All rights reserved  
DS99844A(05/08)  
IXGQ90N33TB  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-3P Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
IC = 45A VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
45  
76  
S
Cies  
Coes  
Cres  
2490  
234  
19  
pF  
pF  
pF  
Qg  
69  
18  
nC  
Qge  
Qgc  
td(on)  
tri  
IC = 0.5 • IC25, VGE = 15V, VCE = 0.5 • VCES  
nC  
13  
nC  
15  
ns  
Resistive load, TJ = 25°C  
IC = 0.5 • IC25, VGE = 15V  
VCE = 240V, RG = 5Ω  
29  
ns  
td(off)  
tfi  
td(on)  
tri  
td(off)  
tfi  
46  
ns  
166  
13  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 0.5 • IC25, VGE = 15V  
VCE = 240V, RG = 5Ω  
26  
ns  
ns  
52  
330  
ns  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
0.25  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGQ90N33TB  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
7V  
11V  
9V  
7V  
0
0.0  
0.0  
5
0.2  
0.2  
6
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.0  
15  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
7V  
I C = 90A  
I C = 45A  
5V  
I C = 23A  
100  
-50  
-25  
0
25  
50  
75  
125  
150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
IC = 180A  
90A  
45A  
7
8
9
10  
11  
12  
13  
14  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
6.6  
7.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION All rights reserved  
IXGQ90N33TB  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 165V  
I C = 45A  
I
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
0
10 20 30 40 50 60 70 80 90 100 110 120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
f
= 1 MHz  
C
C
ies  
oes  
TJ = 150ºC  
RG = 5  
Ω
C
res  
dV / dt < 10V / ns  
10  
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1.00  
0.10  
0.01  
VCE  
Limit  
(sat)  
1µs  
10µs  
100µs  
1ms  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
1
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXGQ90N33TB  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
31  
30  
29  
28  
27  
26  
25  
24  
23  
31  
30  
29  
28  
27  
26  
25  
RG = 5  
Ω
RG = 5  
Ω
VGE = 15V  
VGE = 15V  
TJ = 25ºC  
VCE = 240V  
VCE = 240V  
I C = 90A  
TJ = 125ºC  
I C = 45A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
70  
23  
21  
19  
17  
15  
13  
11  
380  
53  
51  
49  
47  
45  
43  
41  
39  
37  
t r  
td(on) - - - -  
t f  
td(off)  
- - - -  
340  
300  
260  
220  
180  
140  
100  
60  
I C = 45A  
60  
50  
40  
30  
20  
10  
TJ = 125ºC, VGE = 15V  
RG = 5 , VGE = 15V  
Ω
VCE = 240V  
VCE = 240V  
I C = 90A, 45A  
I C = 90A  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
450  
400  
350  
300  
250  
200  
150  
100  
50  
66  
62  
58  
54  
50  
46  
42  
38  
34  
400  
380  
360  
340  
320  
300  
280  
260  
240  
120  
110  
100  
90  
t r  
t f  
td(on)  
- - - -  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 5 , VGE = 15V  
Ω
VCE = 240V  
VCE = 240V  
TJ = 125ºC  
I C = 45A  
80  
70  
I C = 90A  
60  
TJ = 25ºC  
50  
40  
20  
30  
40  
50  
60  
70  
80  
90  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION All rights reserved  
IXYS REF: G_90N33TB(4G)5-27-08-B  

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