IXGT31N60 [IXYS]

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3;
IXGT31N60
型号: IXGT31N60
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

栅 功率控制 晶体管
文件: 总2页 (文件大小:69K)
下载:  下载PDF数据表文档文件

IXGT31N60D1

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13 IXYS

IXGT32N100A3

GenX3 1000V IGBT

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8 IXYS

IXGT32N120A3

GenX3 1200V

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9 IXYS

IXGT32N170

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36 IXYS

IXGT32N170A

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20 IXYS

IXGT32N60B

HiPerFAST IGBT

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17 IXYS

IXGT32N60BD1

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14 IXYS

IXGT32N60BD1

HiPerFAST IGBTwith Diode

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7 IXYS

IXGT32N60BD1

HiPerFAST IGBTwith Diode

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19 IXYS

IXGT32N60C

HiPerFAST IGBT Lightspeed Series

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22 IXYS

IXGT32N60CD1

HiPerFAST IGBT with Diode

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18 IXYS

IXGT32N60CD1

HiPerFAST IGBT with Diode

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6 IXYS

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HiPerFAST IGBT B2-Class High Speed IGBTs

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9 IXYS

IXGT32N90B2D1

HiPerFAST IGBT with Fast Diode

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13 IXYS

IXGT35N120B

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9 IXYS