IXGX120N60B3 [IXYS]
GenX3 600V IGBTs; GenX3 600V的IGBT
| 型号： | IXGX120N60B3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBTs |
| 文件： | 总6页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 600V
IGBTs
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 120A
≤£ 1.8V
= 145ns
IXGK120N60B3
IXGX120N60B3
Medium-Speed-Low-Vsat PT
IGBTs for 5-40kHz Switching
TO-264 (IXGK)
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
G
C
E
600
600
±20
±30
V
V
V
V
VCGR
Tab
VGES
VGEM
Transient
PLUS247TM (IXGX)
IC25
TC = 25°C (Chip Capability)
TC = 110°C
280
120
160
600
A
A
A
A
IC110
ILRMS
ICM
Terminal Current Limit
TC = 25°C, 1ms
G
C
E
SSOA
(RBSOA)
VGE= 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
ICM = 300
A
VCE ≤ VCES
PC
TC = 25°C
780
W
TJ
-55 ... +150
150
°C
°C
°C
G = Gate
C = Collector
E
= Emitter
Tab = Collector
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
High Current Handling Capability
International Standard Packages
Md
FC
Mounting Torque (IXGK)
Mounting Force (IXGX)
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
z
z
z
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Applications
Symbol
Test Conditions
Characteristic Values
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
z
z
BVCES
VGE(th)
ICES
IC = 250μA, VGE= 0V
IC = 500μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
5.0
z
z
50 μA
mA
±100 nA
1.8
z
TJ = 125°C
3
z
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
1.5
V
DS99993A(09/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGK120N60B3
IXGX120N60B3
Symbol
Test Conditions
Characteristic Values
TO-264 AA ( IXGK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
100
170
S
Cies
Coes
Cres
14.6
790
140
nF
pF
pF
Qg
465
74
nC
nC
nC
Qge
Qgc
IC = 120A, VGE = 15V, VCE = 0.5 • VCES
Terminals:
1
= Gate
2,4 = Collector
Emitter
167
Back Side
3
=
td(on)
tri
40
87
ns
ns
Inductive load, TJ = 25°C
Dim.
Millimeter
Min. Max.
Inches
Max.
Min.
IC = 100A, VGE = 15V
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Eon
td(off)
tfi
2.9
227
145
3.5
mJ
ns
VCE = 480V, RG = 2Ω
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
ns
Note 2
Eoff
mJ
0.53
0.83
.021
1.020
.780
.033
1.030
.786
25.91 26.16
19.81 19.96
5.46 BSC
td(on)
tri
38
85
ns
ns
Inductive load, TJ = 125°C
.215 BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
IC = 100A, VGE = 15V
Eon
td(off)
tfi
4.0
290
230
4.7
mJ
ns
20.32 20.83
.800
.090
.820
.102
2.29
2.59
VCE = 480V, RG = 2Ω
3.17
3.66
.125
.144
ns
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Note 2
Eoff
mJ
3.81
1.78
4.32
2.29
.150
.070
.170
.090
RthJC
RthCS
0.16 °C/W
°C/W
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
0.15
PLUS247TM (IXGX) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGK120N60B3
IXGX120N60B3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
180
160
140
120
100
80
350
300
250
200
150
100
50
VGE = 15V
11V
VGE = 15V
11V
9V
9V
7V
7V
60
40
20
5V
5V
0
0
0
0
5
0.2
0.2
6
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
15
0
1
2
3
4
5
6
7
8
9
10
150
7.0
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
200
180
160
140
120
100
80
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
11V
VGE = 15V
I C = 200A
9V
7V
I C = 100A
60
40
I C = 50A
5V
20
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
180
160
140
120
100
80
TJ = 25ºC
TJ = 125ºC
25ºC
I C = 200A
- 40ºC
100A
50A
60
40
20
0
7
8
9
10
11
12
13
14
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXGK120N60B3
IXGX120N60B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
300
270
240
210
180
150
120
90
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 120A
I G = 10mA
25ºC
125ºC
6
4
60
2
30
0
0
0
50
100
150
200
250
300
350
400
450
500
650
10
0
20
40
60
80
100
120
140
160
180
200
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
100,000
10,000
1,000
100
350
300
250
200
150
100
50
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
G = 2Ω
dV / dt < 10V / ns
C
R
res
0
10
200
250
300
350
400
450
500
550
600
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK120N60B3
IXGX120N60B3
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
8
7
6
5
4
3
2
1
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
8
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
E
E
on - - - -
E
E
on - - - -
VGE = 15V
off
off
RG = 2
TJ = 125ºC , VGE = 15V
VCE = 480V
Ω ,
CE = 480V
V
I C = 100A
TJ = 125ºC
TJ = 25ºC
I C = 50A
50
55
60
65
70
75
80
85
90
95
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
8
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
260
250
240
230
220
210
200
190
180
170
1100
1000
900
800
700
600
500
400
300
200
E
E
on - - - -
t f i
td(off) - - - -
V
off
7
6
5
4
3
2
1
0
RG = 2Ω VGE = 15V
,
TJ = 125ºC, GE = 15V
VCE = 480V
CE = 480V
V
I C = 100A
I C = 100A
I C = 50A
I C = 50A
2
3
4
5
6
7
8
9
10 11 12 13 14 15
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
260
240
220
200
180
160
140
120
100
360
260
340
320
300
280
260
240
220
200
180
t f i
td(off)
- - - -
340
320
300
280
260
240
220
200
t f i
td(off)
- - - -
240
220
200
180
160
140
120
100
RG = 2Ω , VGE = 15V
RG = 2Ω , VGE = 15V
VCE = 480V
VCE = 480V
I C = 100A, 50A
TJ = 125ºC
TJ = 25ºC
I
= 50A
75
C
25
35
45
55
65
85
95
105
115
125
50
55
60
65
70
75
80
85
90
95
100
TJ - Degrees Centigrade
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGK120N60B3
IXGX120N60B3
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
100
90
80
70
60
50
40
30
44
42
40
38
36
34
32
30
160
140
120
100
80
140
120
100
80
tr i
td(on)
- - - -
t r i
td(on) - - - -
RG = 2Ω , VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 480V
VCE = 480V
TJ = 25ºC, 125ºC
I C = 100A
60
I C = 50A
60
40
40
20
20
0
50
55
60
65
70
75
80
85
90
95
100
2
3
4
5
6
7
8
9
10
11 12
13 14
15
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times
vs. Junction Temperature
140
120
100
80
44
42
40
38
36
34
32
30
tr i
td(on) - - - -
RG = 2Ω , VGE = 15V
VCE = 480V
I C = 100A
60
40
20
I C = 50A
0
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60B3(86)9-09-10-A
相关型号：
IXGX32N170H1
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, PLUS247, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明