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IXGX75N250 [IXYS]

Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247, 3 PIN;
IXGX75N250
型号： IXGX75N250
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Insulated Gate Bipolar Transistor, 180A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, PLUS247, 3 PIN

栅 功率控制 晶体管
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Preliminary Technical Information  
High Voltage IGBTs  
VCES = 2500V  
IC110 = 75A  
VCE(sat) ≤ 2.7V  
IXGK75N250  
IXGX75N250  
For Capacitor Discharge  
Applications  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
C
E
2500  
2500  
±20  
V
V
V
V
VCGR  
Tab  
VGES  
VGEM  
Transient  
±30  
PLUS247TM (IXGX)  
IC25  
IC110  
ILRMS  
TC = 25°C ( Chip Capability )  
TC = 110°C  
170  
75  
A
A
A
TC = 25°C (Lead RMS Limit)  
160  
ICM  
TC = 25°C, VGE = 20V, 1ms  
530  
A
A
G
C
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 200  
E
(RBSOA)  
Clamped Inductive Load  
@ 0.8 • VCES  
PC  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Features  
ꢀVery High Peak Current Capability  
ꢀLow Saturation Voltage  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
ꢀMOS Gate Turn-On  
Weight  
TO-264  
PLUS247  
10  
6
g
g
ꢀRugged NPT Structure  
ꢀMolding Epoxies meet UL 94V-0  
Flammability Classification  
Advantages  
ꢀ
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
ꢀ
BVCES  
VGE(th)  
ICES  
IC = 1mA, VCE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
5.0  
V
Applications  
50 μA  
ꢀ
Capacitor Discharge  
Pulser Circuits  
TJ = 125°C  
5 mA  
ꢀ
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
IC = 75A, VGE = 15V, Note 1  
IC = 150A  
2.7  
3.6  
V
V
DS99826B(07/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK75N250  
IXGX75N250  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA ( IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
35  
58  
S
Cies  
Coes  
Cres  
9000  
345  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
110  
Qg  
410  
63  
nC  
nC  
nC  
Qge  
Qgc  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
Back Side  
175  
3
=
td(on)  
tr  
td(off)  
tf  
55  
225  
270  
455  
ns  
ns  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Max.  
Resistive Switching Times  
IC = 150A, VGE = 15V  
Min.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VCE = 1250V, RG = 1Ω  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCK  
0.16 °C/W  
°C/W  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
Q
Q1  
3.17  
6.07  
8.38  
3.66  
6.27  
8.69  
.125  
.239  
.330  
.144  
.247  
.342  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
*Additional provision for lead-to-lead voltage isolation are required at VCE >1200V.  
PLUS247TM (IXGX) Outline  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK75N250  
IXGX75N250  
Fig. 2. Output Characteristics @ TJ = 125ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
VGE = 25V  
20V  
VGE = 25V  
300  
250  
200  
150  
100  
50  
20V  
15V  
15V  
10V  
15V  
10V  
5V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
VCE - Volts  
VCE - Volts  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
8
7
6
5
4
3
2
1
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
TJ = 25ºC  
VGE = 15V  
I C = 300A  
I C = 300A  
I C = 150A  
150A  
75A  
I C = 75A  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VGE - Volts  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
50  
100  
150  
200  
250  
IC - Amperes  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGK75N250  
IXGX75N250  
Fig. 7. Gate Charge  
Fig. 8. Capacitance  
100,000  
10,000  
1,000  
100  
16  
14  
12  
10  
8
= 1MHz  
f
VCE = 1000V  
I
I
C = 75A  
G = 10 mA  
C
C
ies  
oes  
6
4
C
res  
2
0
10  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VCE - Volts  
Fig. 10. Maximum Transient Thermal Impedance  
Fig. 9. Reverse-Bias Safe Operating Area  
225  
200  
175  
150  
125  
100  
75  
1.000  
0.100  
0.010  
0.001  
50  
TJ = 125ºC  
G = 1Ω  
dv / dt < 10V / ns  
R
25  
0
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGK75N250  
IXGX75N250  
Fig. 12. Resistive Turn-on Rise Time  
Fig. 11. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Collector Current  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
RG = 1Ω , VGE = 15V  
RG = 1ꢀ , VGE = 15V  
VCE = 1250V  
VCE = 1250V  
TJ = 125ºC  
I C = 300A  
TJ = 25ºC  
I C = 150A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
75  
100  
125  
150  
175  
200  
225  
250  
275  
300  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 13. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 14. Resistive Turn-off Switching Times  
vs. Junction Temperature  
900  
800  
700  
600  
500  
400  
300  
200  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
450  
400  
350  
300  
250  
200  
150  
100  
50  
t r  
t
t f  
t
d(off) - - - -  
d(on) - - - -  
75  
70  
65  
60  
55  
50  
45  
40  
TJ = 125ºC, VGE = 15V  
RG = 1Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 150A  
I C = 300A  
I C = 150A  
I C = 300A  
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 15. Resistive Turn-off Switching Times  
vs. Collector Current  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
750  
675  
600  
525  
450  
375  
300  
225  
150  
75  
2000  
480  
t f  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
440  
400  
360  
320  
280  
240  
200  
160  
120  
80  
TJ = 125ºC, VGE = 15V  
RG = 1ꢀ, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 150A, 300A  
TJ = 125ºC, 25ºC  
75  
100  
125  
150  
175  
200  
225  
250  
275  
300  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXG_75N250(9P)87-10-10  

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