IXSH10N120AU1 [IXYS]
IGBT with Diode; IGBT与二极管
| 型号： | IXSH10N120AU1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT with Diode |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXSH10N120AU1
PRELIMINARY DATA SHEET
IC25
= 20 A
IGBT with Diode
VCES = 1200 V
VCE(sat) = 4.0 V
"S" Series - Improved SCSOA Capability
C
Symbol
Test Conditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
TJ = 25°C to 150°C; RGE = 1 MΩ
V
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-247AD
IC25
IC90
ICM
TC = 25°C
20
10
40
A
A
A
TC = 90°C
TC = 25°C, 1 ms
SSOA
V
GE= 15 V, TJ = 125°C, RG = 150 Ω
ICM = 20
A
G
C
E
(RBSOA)
Clamped inductive load, L = 300 µH
@ 0.8 VCES
tsc
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 150Ω
5
µs
W
Features
PC
TC = 25°C
100
• High voltage IGBT with
•
• IgGuBarTanwteithedansthi-opratrcailrlceul idtiSodOeAincaopnaebility.
TJ
-55 ... +150
150
°C
°C
°C
TJM
TSTG
package
• 2nd generation HDMOSTM process
Low VCE(sat)
-55 ... +150
- for minimum on-state conduction
losses
Md
Mounting torque
.
1.15/10 Nm/lb-in.
Weight
6
g
• MOS Gate turn-on
- drive simplicity
Max. Lead Temperature for
300
°C
Soldering (1.6mm from case for 10s)
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• pDoCwcehrospuppeprlsies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVCES
VGE(th)
ICES
IC = 3.25 mA, VGE = 0 V
1200
4
V
V
Advantages
IC = 750 µA, VCE = VGE
8
• Saves space (two devices in one
• Epaacskyatgoemount(isolated mounting
VCE = 0.8 VCES ,VGE= 0 V
Note 2
TJ = 25°C
TJ = 125°C
400
µA
mA
5
+ 100
4.0
• Rhoeldeu)ces assembly time and cost
• Runs cooler than equivalent
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
nA
V
VCE(sat)
• 6E-apsaiecrktoIGpBaTcskage to meet UL
requirements
94523C (1/96)
©1996 IXYS Corporation. All rights reserved.
IXYS Semiconductor GmbH
Edisonstr.15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
IXYSCorporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXSH10N120AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
TO-247AD (IXSH)
gfs
IC = IC90, VCE = 10 V,
4
S
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
37
A
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
800
53
pF
pF
pF
15
Qg
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
40
12
20
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300µH
RG = 120 Ω, VCLAMP = 0.8 VCES
Note 1
100
200
250
620
750
2.5
ns
ns
ns
ns
ns
mJ
tc
Eoff
td(on)
tri
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300µH
RG = 120 Ω
100
200
ns
ns
E(on)
TBD
mJ
td(off)
tfi
VCLAMP = 0.8 VCES
Note 1
300
1100
1200
4.0
ns
ns
tc
ns
Eoff
mJ
RthJC
RthCK
1.25 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min.
Typ.
Max.
VF
IF = IC90, VGE = 0V
2.6
V
Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC
IF = 1A; di/dt = -50A/µs; VR = 30V; TJ = 25ºC
IF = IC90, VGE = 0V, -diF/dt = 100 A/µs
TJ = 100ºC, VR = 540V
2.3
70
trr
50
ns
A
IRM
trr
6.5 7.2
300
ns
RthJC
2.0 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher T or Rg values.
2. Device must be heatsunk for high temperature leakage current meJasurements to
avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
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