IXST30N60C [IXYS]
High Speed IGBT; 高速IGBT
| 型号： | IXST30N60C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Speed IGBT |
| 文件： | 总4页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V
I
t
High Speed IGBT
CES
CES
fi
IXSH/IXST 30N60B
IXSH/IXST 30N60C
600 V 2.0 V 140 ns
600 V 2.5 V 70 ns
Short Circuit SOA Capability
TO-247 AD (IXSH)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
T
T
= 25°C to 150°C
600
600
V
V
J
J
(TAB)
= 25°C to 150°C; R = 1 MΩ
GE
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-268 (D3) ( IXST)
IC25
IC90
ICM
T
= 25°C
55
30
A
A
A
C
T
= 90°C
C
G
T
= 25°C, 1 ms
110
C
(TAB)
S
SSOA
(RBSOA)
V
= 15 V, T = 125°C, R = 2.7 Ω
Clamped inductive load, V = 0.8 V
I = 60
CM
A
µs
W
GE
J
G
@ 0.8 V
CES
G = Gate
S = Source
CC
CES
TAB = Drain
tSC
(SCSOA)
V
= 15 V, V = 360 V, T = 125°C
10
GE
CE
J
R
= 33 Ω, non repetitive
= 25°C
G
PC
T
200
C
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
l
International standard packages
Short Circuit SOA capability
High frequency IGBT
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
l
l
l
Weight
TO-247
TO-268
6
4
g
g
TM
New generation HDMOS process
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
l
AC motor speed control
DC servo and robot drives
l
Symbol
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
l
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
J
l
min. typ. max.
l
BVCES
VGE(th)
I
= 250 µA, V = 0 V
600
4
V
V
C
GE
I
= 2.5 mA, V = V
GE
7
C
CE
Advantages
ICES
V
V
= 0.8 V
= 0 V
T = 25°C
100 µA
mA
CE
CES
J
l
Easy to mount with 1 screw
(isolated mounting screw hole)
T = 125°C
1
GE
J
l
Surface mountable, high power case
style
Reduce assembly time and cost
High power density
IGES
V
= 0 V, V = ±20 V
±100 nA
CE
GE
l
VCE(sat)
V
= 15 V; I = I
C90
30N60B
30N60C
2.0
2.5
V
V
GE
C
l
© 2001 IXYS All rights reserved
98519B (11/01)
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-247 AD Outline
J
min. typ. max.
I
= I ; V = 10 V,
10
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
3100
240
30
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
CE
GE
Qg
100
30
nC
nC
nC
Qge
Qgc
I
= I , V = 15 V, V = 0.5 V
CES
C
C90
GE
CE
38
td(on)
tri
30
30
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, TJ = 25°C
= I , V = 15 V
td(off)
30N60B
30N60C
150
90
270 ns
150 ns
I
C
C90
GE
V
Note 1
= 0.8 V , R = 4.7 Ω
CE
CES
G
tfi
30N60B
30N60C
140
70
270 ns
120 ns
Eoff
30N60B
30N60C
1.5
0.7
2.5 mJ
1.2 mJ
td(on)
tri
35
35
ns
ns
Inductive load, TJ = 125°C
= I , V = 15 V
I
C
C90
GE
Eon
td(off)
0.5
mJ
V
Note 1
= 0.8 V , R = 4.7 Ω
CE
CES
G
30N60B
30N60C
270
150
ns
ns
TO-268 Outline
tfi
30N60B
30N60C
250
140
ns
Eoff
30N60B
30N60C
2.5
1.2
mJ
mJ
RthJC
RthCK
0.62 K/W
K/W
(TO-247)
0.25
Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , higher T or
increased R .
CE
CES
J
G
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.1 SaturationCharacteristics
Fig.2 OutputCharacterstics
200
160
120
80
100
80
60
40
20
0
V
GE = 15V
11V
9V
VGE = 15V
TJ = 25°C
TJ = 25°C
13V
13V
11V
7V
5V
9V
40
7V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
VCE - Volts
Fig.3 Collector-EmitterVoltage
vs. Gate-EmitterVoltage
Fig.4 TemperatureDependence
of Output Saturation Voltage
1.6
120
100
80
60
40
20
0
VGS=15V
TJ = 125°C
IC = 60A
VGE = 15V
13V
11V
1.4
1.2
IC = 30A
1.0
9V
7V
IC = 15A
0.8
0.6
25
50
75
100
125
150
0
2
4
6
8
10
VCE - Volts
TJ - Degrees C
Fig.5Input Admittance
Fig.6 TemperatureDependenceof
BreakdownandThresholdVoltage
140
120
100
80
10000
1000
100
V
CE = 10V
f = 1Mhz
C
iss
60
C
oss
TJ = 125°C
40
C
rss
20
TJ = 25°C
0
10
4
6
8
10
12
14
16
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
© 2001 IXYS All rights reserved
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.7 Turn-OffEnergyperPulseand
Fall Time on Collector Current
Fig.8 DependenceofTurn-OffEnergy
Per Pulse and Fall Time on R
G
7.5
5.0
2.5
0.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
E(OFF)
TJ = 125°C
TJ = 125°C
IC = 60A
RG = 10Ω
E(ON)
E(ON)
E(OFF)
E(ON)
IC = 30A
IC = 15A
E(OFF)
E(ON)
E(OFF)
0
10
20
30
40
50
0
20
40
60
80
RG - Ohms
IC - Amperes
Fig.9 GateChargeCharacteristicCurve
Fig.10Turn-OffSafeOperatingArea
15
12
9
100
10
1
IC =30A
V
CE = 300V
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V/ns
6
3
0
0.1
0
25
50
Qg - nanocoulombs
Fig.11 TransientThermalImpedance
75
100
125
0
100
200
300
400
500
600
VCE - Volts
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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