IXTA100N04T2 [IXYS]
Preliminary Technical Information TrenchT2TM Power MOSFET; 初步的技术资料TrenchT2TM功率MOSFET
| 型号： | IXTA100N04T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information TrenchT2TM Power MOSFET |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchT2TM
Power MOSFET
IXTA100N04T2
IXTP100N04T2
VDSS = 40V
ID25 = 100A
RDS(on) ≤ 7mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
(TAB)
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
40
40
V
V
VDGR
TO-220 (IXTP)
VGSM
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
100
75
A
A
A
300
G
D
S
(TAB)
IAR
EAS
PD
TC = 25°C
TC = 25°C
TC = 25°C
50
300
150
A
mJ
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
-55 ... +175
175
°C
°C
°C
Features
TJM
Tstg
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
-55 ... +175
TL
TSOLD
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
z Low package inductance
z 175°C Operating Temperature
z High current handling capability
Md
Mounting torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
z
ROHS Compliant
High performance Trench
z
Technology for extremely low RDS(on)
Advantages
z
Easy to mount
Space savings
High power density
Synchronous
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
40
V
V
z
2.0
4.0
Applications
±100 nA
μA
IDSS
VDS = VDSS
VGS = 0V
2
• Synchronous Buck Converters
• High Current Switching Power
TJ = 150°C
50 μA
7 mΩ
Supplies
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
• Battery Powered Electric Motors
• Resonant-mode power supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
DS99972(4/08)
© 2008 IXYS CORPORATION, All rights reserved
IXTA100N04T2
IXTP100N04T2
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
27
45
S
Ciss
Coss
Crss
2690
490
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
105
td(on)
tr
td(off)
tf
12.0
5.2
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 20V, ID = 0.5 • ID25
15.8
6.4
RG = 5Ω (External)
Qg(on)
Qgs
25.5
8.0
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
5.7
RthJC
RthCH
1.0 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
100
400
1.2
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse width limited by TJM
IF = 50A, VGS = 0V, Note 1
IF = 50A, VGS = 0V
TO-220 (IXTP) Outline
trr
34
1.44
24.5
ns
A
-di/dt = 100A/μs
VR = 20V
IRM
QRM
nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA100N04T2
IXTP100N04T2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
VGS = 15V
VGS = 15V
10V
9V
8V
10V
9V
7V
6V
8V
7V
6V
5V
5V
4
0
0
1
2
3
5
6
7
8
175
175
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
300
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
Fig. 4. RDS(on) Normalized to ID = 50A Value
vs. Junction Temperature
90
80
70
60
50
40
30
20
10
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 15V
VGS = 10V
10V
9V
8V
I D = 100A
7V
6V
I D = 50A
5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 50A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
External Lead Current Limit
15V
- - - -
TJ = 175ºC
TJ = 25ºC
50
100
150
200
250
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXTA100N04T2
IXTP100N04T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
65
60
55
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
0
0
0
1
10
20
30
40
50
60
70
80
90 100 110
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
270
240
210
180
150
120
90
VDS = 20V
I D = 50A
I G = 10mA
TJ = 150ºC
60
TJ = 25ºC
30
0
2
4
6
8
10 12 14 16 18 20 22 24 26
QG - NanoCoulombs
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000
100
10
10,000
1,000
100
R
DS(on)
Limit
C
iss
25µs
100µs
C
C
oss
1ms
rss
DC
10ms
TJ = 175ºC
TC = 25ºC
Single Pulse
100ms
= 1 MHz
5
f
10
1
0
10
15
20
25
30
35
40
10
100
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
VDS - Volts
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
RG = 5Ω
RG = 5Ω
VGS = 10V
VDS = 20V
VGS = 10V
VDS = 20V
TJ = 125ºC
I D = 100A
I D = 50A
TJ = 25ºC
25
35
45
55
65
75
85
95
105 115 125
20
30
40
50
60
70
80
90
100
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
14
13
12
11
10
9
23
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
16
15
14
13
12
11
10
9
22
21
20
19
18
17
16
15
14
13
12
t r
td(on) - - - -
tf
RG = 5Ω, VGS = 10V
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 20V
VDS = 20V
I D = 50A, 100A
I D = 100A
8
7
I D = 50A
6
I D = 100A
5
4
3
25
35
45
55
65
75
85
95 105 115 125
4
6
8
10
12
14
16
18
20
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
18
16
14
12
10
8
28
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
tf
RG = 5Ω, VGS = 10V
td(off) - - - -
tf
td(off) - - - -
26
24
22
20
18
16
14
12
10
TJ = 125ºC, VGS = 10V
VDS = 20V
VDS = 20V
TJ = 125ºC
I D = 50A
I D = 100A
6
TJ = 25ºC
80
4
2
4
6
8
10
12
14
16
18
20
20
30
40
50
60
70
90
100
RG - Ohms
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXTA100N04T2
IXTP100N04T2
Fig. 19. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_100N04T2(V2) 4-23-08
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