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元器件品牌
IXTA170N075T2
[IXYS]
Preliminary Technical Information TrenchT2TM Power MOSFET; 初步的技术资料TrenchT2TM功率MOSFET
元器件型号:
IXTA170N075T2
生产厂家:
IXYS CORPORATION
描述和应用:
Preliminary Technical Information TrenchT2TM Power MOSFET
初步的技术资料TrenchT2TM功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件:
总6页 (文件大小:208K)
下载文档:
下载PDF数据表文档文件
型号参数:IXTA170N075T2参数
查看货源
IXTA180N055T
Trench Gate Power MOSFET
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36
IXYS
IXTA180N085T
Power Field-Effect Transistor, 180A I(D), 85V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Warning
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156
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0
IXYS
IXTA180N10T
N-Channel Enhancement Mode Avalanche Rated
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57
IXYS
IXTA180N10T
Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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2
IXYS
IXTA180N10T7
PreliminaryTechnical Information TrenchMVTM Power MOSFET
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45
IXYS
IXTA182N055T
Power Field-Effect Transistor, 182A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN
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0
IXYS
IXTA182N055T7
Power Field-Effect Transistor, 182A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN
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0
IXYS
IXTA18P10T
Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3
Warning
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156
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0
IXYS
IXTA1N100
High Voltage MOSFET
Warning
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156
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38
IXYS
IXTA1N100
High Voltage MOSFET
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156
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26
IXYS
IXTA1N100P
Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
IXYS
IXTA1N100P
Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Warning
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156
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0
IXYS
IXTA1N200P3HV
Power Field-Effect Transistor,
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156
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2
IXYS
IXTA1N80
High Voltage MOSFET
Warning
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156
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24
IXYS
IXTA1N80
High Voltage MOSFET
Warning
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on line
156
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13
IXYS
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