IXTA220N04T2-TRL [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTA220N04T2-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchT2TM
Power MOSFET
VDSS = 40V
ID25 = 220A
RDS(on) 3.5m
IXTA220N04T2
IXTP220N04T2
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 175C
40
40
V
V
VDGR
TJ = 25C to 175C, RGS = 1M
VGSM
Transient
20
V
G
D
ID25
IL(RMS)
IDM
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
220
120
660
A
A
A
S
D (Tab)
G = Gate
D
= Drain
S = Source Tab = Drain
IA
TC = 25C
TC = 25C
110
600
A
EAS
mJ
PD
TC = 25C
360
W
Features
TJ
-55 ... +175
175
C
C
C
TJM
Tstg
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
175°C Operating Temperature
High Current Handling Capability
ROHS Compliant
High Performance Trench
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-263
TO-220
2.5
3.0
g
g
Technology for extremely low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
40
V
V
Applications
2.0
4.0
Automotive Engine Control
Synchronous Buck Converter
200 nA
A
IDSS
5
(for Notebook SystemPower &
TJ = 150C
VGS = 10V, ID = 50A, Notes 1 & 2
50 A
3.5 m
General Purpose Point & Load)
DC/DC Converters
High Current Switching Applications
RDS(on)
2.8
Power Train Management
Distributed Power Architecture
DS99918D(7/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA220N04T2
IXTP220N04T2
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
A
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
E
E1
C2
L1
L2
gfs
VDS = 10V, ID = 60A, Note 1
40
66
S
D1
D
4
H
A1
Ciss
Coss
Crss
6820
1185
250
pF
pF
pF
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz
b
b2
L3
c
e
e
0.43 [11.0]
0
0.34 [8.7]
td(on)
tr
td(off)
tf
15
21
31
21
ns
ns
ns
ns
Resistive Switching Times
0.66 [16.6]
A2
V
GS = 10V, VDS = 20V, ID = 50A
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
60.12 [3.0]
0.06 [1.6]
RG = 3.3 (External)
Qg(on)
Qgs
112
33
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgd
30
RthJC
RthCS
0.42 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
220
660
1.1
IS
VGS = 0V
A
A
V
TO-220 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 50A, VGS = 0V, Note 1
A
E
oP
A1
H1
Q
trr
45
1.8
32
ns
A
D2
E1
D
IF = 110A, VGS = 0V,
IRM
QRM
D1
-di/dt = 100A/s, VR = 20V
nC
A2
EJECTOR
PIN
L1
L
3X b
3X b2
ee
c
e1
Notes: 1. Pulse test, t 300s; duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTA220N04T2
IXTP220N04T2
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
350
300
250
200
150
100
50
V
= 15V
GS
V
= 15V
GS
200
160
120
80
10V
9V
8V
10V
9V
8V
7V
7V
6V
6V
5V
40
5V
0
0
0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 110A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GS
200
160
120
80
10V
9V
8V
V
= 10V
GS
I
= 220A
D
7V
6V
I
= 110A
D
40
5V
0
-50
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 110A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
140
120
100
80
V
= 10V
15V
GS
External Lead Current Limit
T = 175oC
J
60
40
T = 25oC
J
20
0
40
80
120
160
200
240
280
320
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA220N04T2
IXTP220N04T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
160
140
120
100
80
120
100
80
60
40
20
0
T
= - 40oC
J
25oC
150oC
T
J
=150oC
60
25oC
- 40oC
40
20
0
2.5
0.3
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.3
40
0
20
40
60
80
100
120
140
160
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
300
270
240
210
180
150
120
90
10
9
8
7
6
5
4
3
2
1
0
V
= 20V
DS
I
I
= 110A
= 10mA
D
G
T
= 150oC
J
= 25oC
60
T
J
30
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
10
20
30
40
50
60
70
80
90
100 110 120
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
10
10,000
1,000
100
R
Limit
DS(on)
C
iss
25μs
100μs
External Lead Limit
1ms
C
oss
10ms
T = 175oC
J
DC
100ms
T
= 25oC
C
C
rss
f
= 1 MHz
5
Single Pulse
1
10
15
20
25
30
35
1
10
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA220N04T2
IXTP220N04T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
28
26
24
22
20
18
28
26
24
22
20
18
16
R
= 3.3Ω, V = 10V
GS
G
R
= 3.3Ω, V = 10V
GS
G
V
= 20V
DS
V
= 20V
DS
T = 125oC
J
I
= 110A
D
T = 25oC
J
I
= 220A
D
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
120
140
160
180
200
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
120
100
80
60
40
20
0
65
36
42
t f
td(off)
t r
td(on)
32
28
24
20
16
12
38
34
30
26
22
18
55
45
35
25
15
5
T = 125oC, V = 10V
R
G
= 3.3Ω, V = 10V
GS
J
GS
V
= 20V
DS
V
= 20V
DS
I
= 220A
D
I
= 220A, 110A
D
I
= 110A
D
25
35
45
55
65
75
85
95
105
115
125
2
4
6
8
10
12
14
16
18
20
TJ - Degrees Centigrade
RG - Ohms
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
200
200
180
160
140
120
100
80
42
38
34
30
26
22
18
14
50
46
42
38
34
30
26
22
180
160
140
120
100
80
t f
td(off)
t f
td(off)
T = 125oC, V = 10V
J
GS
R
G
= 3.3Ω, V = 10V
GS
V
= 20V
DS
V
= 20V
DS
T = 125oC
J
I
= 110A
D
60
60
40
40
I
= 220A
D
20
20
T = 25oC
J
0
0
2
4
6
8
10
12
14
16
18
20
40
60
80
100
120
140
160
180
200
RG - Ohms
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA220N04T2
IXTP220N04T2
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_220N04T2 (V5) 7-10-18-F
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