IXTA6N50P [IXYS]

Power Field-Effect Transistor, 6A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
IXTA6N50P
型号: IXTA6N50P
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, 6A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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文件: 总5页 (文件大小:225K)
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IXTA70N075T2

DC to DC Synchronous Converter Design

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20 IXYS

IXTA70N075T2-TRL

Power Field-Effect Transistor,

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1 IXYS

IXTA75N10P

N-Channel Enhancement Mode

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51 IXYS

IXTA76N075T

Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated

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35 IXYS

IXTA76N075T

Power Field-Effect Transistor, 76A I(D), 75V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

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2 IXYS

IXTA76N25T

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

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53 IXYS

IXTA76P10T

P-Channel Enhancement Mode Avalanche Rated

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87 IXYS

IXTA7N60P

Power Field-Effect Transistor, 7A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IXYS

IXTA80N075L2

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTA80N075L2

Power Field-Effect Transistor,

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0 IXYS

IXTA80N075L2-TRL

Power Field-Effect Transistor,

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0 IXYS

IXTA80N10T

TrenchMVTM Power MOSFET

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25 IXYS

IXTA80N10T7

Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

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0 LITTELFUSE

IXTA80N12T2

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTA80N12T2

Power Field-Effect Transistor, 80A I(D), 120V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263AA, 3 PIN

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0 IXYS