IXTH10N100D [IXYS]

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3;
IXTH10N100D
型号: IXTH10N100D
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

文件: 总5页 (文件大小:205K)
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IXTH10N100D2

Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

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0 IXYS

IXTH10N60

10 AMP, 600V, 0.55-ohm / 0.7-ohm

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9 IXYS

IXTH10N60

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247

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26 ETC

IXTH10N60

10 AMP, 600V, 0.55-ohm / 0.7-ohm

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20 IXYS

IXTH10N60A

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247

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28 ETC

IXTH10N80

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) | TO-218VAR

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31 ETC

IXTH10N80

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH10N90

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-218VAR

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31 ETC

IXTH10N90

Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

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-
0 IXYS

IXTH10N95

TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) | TO-218VAR

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25 ETC

IXTH10N95

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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-
0 IXYS

IXTH10P45

TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-218VAR

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35 ETC

IXTH10P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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30 IXYS

IXTH10P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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44 IXYS

IXTH10P50P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

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31 IXYS