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元器件品牌
IXTH200N10T
[IXYS]
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated; TrenchMVTM功率MOSFET N沟道增强型额定雪崩
元器件型号：
IXTH200N10T
生产厂家：
IXYS CORPORATION
描述和应用：
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
TrenchMVTM功率MOSFET N沟道增强型额定雪崩
PDF文件：
总5页 (文件大小：175K)
下载文档：
下载PDF数据表文档文件
型号参数：IXTH200N10T参数
查看货源
IXTH20N50D
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
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IXYS
IXTH20N50D
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
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0
LITTELFUSE
IXTH20N55
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-218VAR
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31
ETC
IXTH20N55
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
IXYS
IXTH20N55MA
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
Warning
: Undefined variable $rtag in
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14
ETC
IXTH20N55MA
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
IXYS
IXTH20N55MB
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
Warning
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11
ETC
IXTH20N55MB
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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156
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0
IXYS
IXTH20N60
MegaMOS FET
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156
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79
IXYS
IXTH20N60MA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)
Warning
: Undefined variable $rtag in
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21
ETC
IXTH20N60MB
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)
Warning
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13
ETC
IXTH20N65X
Power Field-Effect Transistor,
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156
-
0
LITTELFUSE
IXTH20N65X
Power Field-Effect Transistor,
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156
-
0
IXYS
IXTH20P25
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-218VAR
Warning
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35
ETC
IXTH20P25
Transistor
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156
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1
IXYS
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