IXTH26N60P [IXYS]

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;
IXTH26N60P
型号: IXTH26N60P
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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文件: 总5页 (文件大小:236K)
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IXTH26P20P

P-Channel Enhancement Mode Avalanche Rated

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37 IXYS

IXTH26P20P

Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3

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3 IXYS

IXTH270N04T4

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTH270N04T4

Power Field-Effect Transistor

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0 IXYS

IXTH27N35MA

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5)

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11 ETC

IXTH27N35MB

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5)

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22 ETC

IXTH27N35MB

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH27N40MA

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 27A I(D) | TO-247(5)

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28 ETC

IXTH27N40MA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH27N40MB

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 27A I(D) | TO-247(5)

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12 ETC

IXTH27N40MB

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH280N055T

N-Channel Enhancement Mode Avalanche Rated

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12 IXYS

IXTH28N50Q

Power MOSFETs Q-Class

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18 IRF

IXTH2N150L

MOSFET N-CH 1500V 2A TO-247

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0 IXYS

IXTH2N300P3HV

MOSFET N-CH 3000V 2A TO247HV

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3 IXYS