IXTH52N65X [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTH52N65X |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
X-Class
Power MOSFET
VDSS = 650V
ID25 = 52A
RDS(on) 68m
IXTH52N65X
N-Channel Enhancement Mode
TO-247 (IXTH)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
650
650
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
G
D
Tab
VGSS
VGSM
Continuous
Transient
30
40
V
V
S
G = Gate
S = Source
D
= Drain
ID25
IDM
TC = 25C
52
A
A
Tab = Drain
TC = 25C, Pulse Width Limited by TJM
104
PD
TC = 25C
660
W
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
International Standard Package
Low RDS(ON) and QG
Low Package Inductance
Md
Mounting Torque
1.13/10
6
Nm/lb.in
g
Weight
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
650
V
V
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
3.0
5.0
100 nA
IDSS
10 A
TJ = 125C
100 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
68 m
DS100604D(6/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTH52N65X
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
D
A
A2
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
25
42
S
A
B
E
RGi
1.1
Q
S
D2
P1
R
D1
Ciss
Coss
Crss
4350
3300
120
pF
pF
pF
D
4
VGS = 0V, VDS = 25V, f = 1MHz
1
2
3
L1
C
E1
L
Effective Output Capacitance
Co(er)
Co(tr)
204
673
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
A1
b
b2
C
1 - Gate
2,4 - Drain
3 - Source
b4
e
td(on)
tr
td(off)
tf
26
57
63
16
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 2 (External)
Qg(on)
Qgs
113
25
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
57
RthJC
RthCS
0.19 C/W
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
52
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
208
1.4
V
trr
QRM
IRM
435
9.8
46
ns
IF = 26A, -di/dt = 100A/μs
C
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTH52N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
120
100
80
V
= 10V
8V
GS
V
= 10V
9V
GS
50
40
30
20
10
0
7V
8V
7V
60
40
6V
5V
20
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 26A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
50
40
30
20
10
0
V
= 10V
GS
7V
I
= 52A
D
I
= 26A
D
6V
5V
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 26A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
T = 125ºC
J
BV
DSS
T = 25ºC
J
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
0
20
40
60
80
100
120
140
TJ - Degrees Centigrade
ID - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXTH52N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
T
J
= 125ºC
25ºC
- 40ºC
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
80
70
60
50
40
30
20
10
0
160
140
120
100
80
T
J
= - 40ºC
25ºC
125ºC
60
T
J
= 125ºC
40
T
J
= 25ºC
20
0
0
10
20
30
40
50
60
70
80
90
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 325V
DS
I
I
= 26A
D
G
C
iss
= 10mA
C
C
oss
rss
10
= 1 MHz
f
1
0
10
20
30
40
50
60
70
80
90
100 110 120
1
10
100
1000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH52N65X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
100
10
45
40
35
30
25
20
15
10
5
R
Limit
)
DS(
on
25µs
100µs
1ms
1
T
= 150ºC
= 25ºC
J
10ms
T
C
100ms
Single Pulse
DC
0
0.1
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_52N65X(I8-R4T4) 6-17-15-A
相关型号：
IXTH52P10P
Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
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