IXTH6N100D2 [IXYS]

Preliminary Technical Information Depletion Mode MOSFET; 初步的技术资料耗尽型MOSFET
IXTH6N100D2
型号: IXTH6N100D2
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Preliminary Technical Information Depletion Mode MOSFET
初步的技术资料耗尽型MOSFET

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IXTH6N120

High Voltage Power MOSFET

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46 IXYS

IXTH6N120

High Voltage Power MOSFET

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63 IXYS

IXTH6N150

Power Field-Effect Transistor, 6A I(D), 1500V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

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4 IXYS

IXTH6N50D2

Depletion Mode MOSFET

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20 IXYS

IXTH6N60

Transistor

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0 IXYS

IXTH6N80

N-Channel Enhancement Mode

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32 IXYS

IXTH6N80A

N-Channel Enhancement Mode

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29 IXYS

IXTH6N90

Standard Power MOSFET

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23 IXYS

IXTH6N90

Standard Power MOSFET

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14 IXYS

IXTH6N90A

Standard Power MOSFET

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25 IXYS

IXTH6N90A

Standard Power MOSFET

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27 IXYS

IXTH72N20

N-Channel Enhancement Mode

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11 IXYS

IXTH75N08

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-218VAR

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28 ETC

IXTH75N08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

IXTH75N10

MegaMOS FET

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50 IXYS