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元器件品牌
IXTH8P50
[IXYS]
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated; 标准功率MOSFET P沟道增强型额定雪崩
元器件型号：
IXTH8P50
生产厂家：
IXYS CORPORATION
描述和应用：
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
标准功率MOSFET P沟道增强型额定雪崩
PDF文件：
总2页 (文件大小：77K)
下载文档：
下载PDF数据表文档文件
型号参数：IXTH8P50参数
查看货源
IXTH90N15T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
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156
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25
IXYS
IXTH90P10P
Power Field-Effect Transistor,
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156
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1
LITTELFUSE
IXTH96N20P
N-Channel Engancement Mode
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156
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19
IXYS
IXTH96N20P
N-Channel Engancement Mode
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156
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43
IXYS
IXTH96P085T
TrenchPTM Power MOSFETs P-Channel Enhancement Mode
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156
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55
IXYS
IXTH9N100
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-218VAR
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18
ETC
IXTH9N100
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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156
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0
IXYS
IXTH9N95
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 9A I(D) | TO-218VAR
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20
ETC
IXTH9N95
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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0
IXYS
IXTI10N60P
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PIN
Warning
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1
IXYS
IXTI12N50P
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN
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0
IXYS
IXTI12N50P
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
LITTELFUSE
IXTI76N25T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
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29
IXYS
IXTJ36N20
Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PIN
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0
LITTELFUSE
IXTJ36N20
Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PIN
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0
IXYS
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