IXTH8P50 [IXYS]
Standard Power MOSFET - P-Channel Enhancement Mode Avalanche Rated; 标准功率MOSFET - P沟道增强型额定雪崩型号: | IXTH8P50 |
厂家: | IXYS CORPORATION |
描述: | Standard Power MOSFET - P-Channel Enhancement Mode Avalanche Rated |
文件: | 总4页 (文件大小:574K) |
下载: | 下载PDF数据表文档文件 |
IXTH90N15T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement ModeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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25
IXYS
IXTH90P10P
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
LITTELFUSE
IXTH96N20P
N-Channel Engancement ModeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
IXYS
IXTH96N20P
N-Channel Engancement ModeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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43
IXYS
IXTH96P085T
TrenchPTM Power MOSFETs P-Channel Enhancement ModeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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55
IXYS
IXTH9N100
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-218VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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18
ETC
IXTH9N100
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IXYS
IXTH9N95
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 9A I(D) | TO-218VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
ETC
IXTH9N95
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IXYS
IXTI10N60P
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
IXYS
IXTI12N50P
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IXYS
IXTI12N50P
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
LITTELFUSE
IXTI76N25T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement ModeWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
29
IXYS
IXTJ36N20
Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
LITTELFUSE
IXTJ36N20
Power Field-Effect Transistor, 36A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEADED TO-268, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IXYS
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