IXTK128N15 [IXYS]
High Current Mega MOS FET; 高电流兆丰MOS FET
| 型号： | IXTK128N15 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Current Mega MOS FET |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXTK 128N15
VDSS
ID25
= 150 V
= 128 A
High Current
Mega MOSTMFET
RDS(on) = 15 mΩ
N-Channel Enhancement Mode
TO-264 AA (IXTK)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
(TAB)
ID25
ID(RMS)
IDM
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
128
75
512
A
A
A
S
G = Gate
D = Drain
S = Source
TAB = Drain
IAR
TC = 25°C
90
A
EAR
EAS
TC = 25°C
TC = 25°C
60
mJ
J
2.5
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
Features
PD
TC = 25°C
540
W
ꢀ
International standard package
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Fast switching times
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
ꢀ
ꢀ
ꢀ
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
Applications
Md
0.7/6 Nm/lb.in.
10
Weight
TO-264
g
ꢀ
Motor controls
DC choppers
Switched-mode power supplies
ꢀ
ꢀ
Advantages
Symbol
TestConditions
Characteristic Values
ꢀ
Easy to mount with one screw
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
(isolated mounting screw hole)
ꢀ
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
VDS = VDSS
150
V
V
Space savings
High power density
ꢀ
2.0
4.0
±100
nA
IDSS
TJ = 25°C
TJ = 125°C
50
2
µA
mA
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
RDS(on)
15 mΩ
DS98952(03/03)
© 2003 IXYS All rights reserved
IXTK 128N15
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-264 AA Outline
VDS = 10 V; ID = 60A, pulse test
50
65
S
Ciss
Coss
Crss
6000
1700
680
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
28
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 Ω (External)
115
17
Qg(on)
Qgs
240
50
nC
nC
nC
Millimeter
Inches
Max.
Min.
Max.
Min.
.190
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
Qgd
95
.100
.079
b
b1
b2
c
D
1.12
2.39
2.90
0.53
25.91
19.81
1.42
2.69
3.09
0.83
26.16
19.96
.044
.094
.114
.021
1.020
.780
.056
.106
.122
.033
1.030
.786
RthJC
RthCK
0.23
K/W
K/W
0.15
E
e
5.46BSC
.215BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
L
L1
P
Q
20.32
2.29
3.17
6.07
8.38
20.83
2.59
3.66
6.27
8.69
.800
.090
.125
.239
.330
.820
.102
.144
.247
.342
Symbol
IS
TestConditions
VGS = 0 V
128
512
1.5
A
Q1
R
R1
S
3.81
1.78
6.04
4.32
2.29
6.30
.150
.070
.238
.170
.090
.248
ISM
Repetitive; pulse width limited by TJM
A
V
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ns
Trr
IF = 25A, -di/dt = 100 A/µs, VR = 100V
250
3
QRM
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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