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IXTN22N100L [IXYS]

Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4;
IXTN22N100L
型号： IXTN22N100L
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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LinearTM Power MOSFET  
w/ Extended FBSOA  
VDSS = 1000V  
ID25 = 22A  
IXTN22N100L  
RDS(on) ≤ 600mΩ  
N-Channel Enhancement Mode  
AvalancheRated  
miniBLOC  
E153432  
S
Symbol  
VDSS  
TestConditions  
MaximumRatings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
D
ID25  
IDM  
TC =25°C  
TC = 25°C, Pulse Width Limited by TJM  
22  
50  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
TC =25°C  
TC =25°C  
22  
A
J
EAS  
1.5  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
PD  
TC =25°C  
700  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
• MiniBLOC with Aluminium Nitride  
Isolation  
VISOL  
Md  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 Minute  
t = 1 Second  
2500  
3000  
V~  
V~  
• Designed for Linear Operation  
• International Standard Package  
• AvalancheRated  
• Molding Epoxy Meets UL94 V-0  
FlammabilityClassification  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
• Easy to Mount  
• SpaceSavings  
• High Power Density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
VDS = VDSS,VGS = 0V  
V
V
5.5  
• ProgrammableLoads  
• CurrentRegulators  
• DC-DCConverters  
• BatteryChargers  
±200 nA  
IDSS  
50 μA  
TJ = 125°C  
1 mA  
• DCChoppers  
• Temperature and Lighting Controls  
RDS(on)  
VGS = 20V, ID = 0.5 • IDSS, Note 1  
600 mΩ  
DS99811B(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN22N100L  
Symbol  
TestConditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • IDSS, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
4.5  
7.0  
9.5  
S
Ciss  
Coss  
Crss  
7050  
600  
pF  
pF  
pF  
100  
td(on)  
tr  
td(off)  
tf  
36  
35  
80  
50  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
RG = 2Ω (External)  
Qg(on)  
Qgs  
270  
70  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
110  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.05  
Safe-Operating-AreaSpecification  
Symbol  
SOA  
TestConditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 800V, ID = 0.3A, TC = 90°C , tp = 5s  
240  
W
Source-DrainDiode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
22  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
50  
1.5  
V
1000  
ns  
IF = IS, -di/dt = 100A/μs VR =100V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN22N100L  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 20V  
14V  
VGS = 20V  
14V  
12V  
12V  
10V  
10V  
9V  
6
9V  
8V  
8V  
4
7V  
6V  
2
7V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
30  
44  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 11A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
22  
20  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
12V  
VGS = 20V  
10V  
I D = 22A  
I D = 11A  
9V  
8V  
6
7V  
4
2
6V  
5V  
0
0
5
10  
15  
20  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 11A Value vs.  
Drain Current  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 20V  
TJ = 125ºC  
TJ = 25ºC  
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN22N100L  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
14  
12  
10  
8
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
3
4
5
6
7
8
9
10  
11  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
VDS = 500V  
I
D = 11A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
40  
80  
120  
160  
200  
240  
280  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
10,000  
1,000  
100  
C
iss  
C
oss  
C
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN22N100L  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 90ºC  
100  
10  
1
100  
10  
1
R
Limit  
DS(on)  
R
Limit  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
DC  
10ms  
T
= 150ºC  
DC  
T
T
= 150ºC  
= 25ºC  
J
J
T
= 90ºC  
C
C
Single Pulse  
Single Pulse  
0.1  
0
10  
100  
1,000  
10,000  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_22N100L(8N)3-19-10  

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