IXTP152N085T [IXYS]
Preliminary Technical Information TrenchMVTM Power MOSFET; 初步的技术资料TrenchMVTM功率MOSFET
| 型号： | IXTP152N085T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information TrenchMVTM Power MOSFET |
| 文件： | 总5页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
VDSS = 85
ID25 = 152
RDS(on) ≤ 7.0 mΩ
V
A
IXTA152N085T
IXTP152N085T
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
85
85
V
V
G
S
VGSM
Transient
20
V
(TAB)
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
152
75
410
A
A
A
TO-220 (IXTP)
IAR
EAS
TC =25°C
TC = 25° C
25
750
A
mJ
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
G
(TAB)
D
S
TC = 25° C
360
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
Features
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 ° C Operating Temperature
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
Md
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Weight
TO-220
TO-263
3
2.5
g
g
Advantages
ꢀ
Easy to mount
Space savings
High power density
ꢀ
ꢀ
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
Applications
Automotive
- Motor Drives
ꢀ
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
85
V
V
2.0
4.0
- 42V Power Bus
- ABS Systems
VGS
=
20 V, VDS = 0 V
200
nA
ꢀ
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
ꢀ
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
Systems
High Current Switching
TJ = 150° C
ꢀ
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
5.8
7.0 m Ω
Applications
DS99532 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA152N085T
IXTP152N085T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263AA (IXTA) Outline
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
60
100
S
Ciss
Coss
Crss
5500
720
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
150
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
30
50
50
45
ns
ns
ns
ns
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Qg(on)
Qgs
114
30
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Qgd
35
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
RthCH
0.42°C/W
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
TO-220
0.50
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
Source-Drain Diode
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
Symbol
Test Conditions
Characteristic Values
L1
L2
L3
L4
TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
IS
VGS = 0 V
152
A
A
R
0.46
0.74
.018
.029
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
410
1.0
TO-220AB (IXTP) Outline
V
IF = 25 A, -di/dt = 100 A/µs
90
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2 7,071,537
IXTA152N085T
IXTP152N085T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
160
140
120
100
80
300
270
240
210
180
150
120
90
V
= 10V
GS
V
= 10V
GS
9V
8V
9V
8V
7V
6V
7V
6V
60
40
60
5V
2
20
30
5V
0
0
0
1
3
4
5
6
7
8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDS - Volts
1
1.1
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 76A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
160
140
120
100
80
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
6V
I
= 152A
D
I
= 76A
D
60
40
5V
20
0
-50
-25
0
25
50
75
100
125
150
175
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 76A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
3
2.8
2.6
2.4
2.2
2
140
120
100
80
V
= 10V
15V
GS
External Lead Current Limit for TO-263 (7-Lead)
- - - -
T = 175ºC
J
External Lead Current Limit for TO-3P, TO-220, & TO-263
1.8
1.6
1.4
1.2
1
60
40
T = 25ºC
J
20
0.8
0
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA152N085T
IXTP152N085T
Fig. 8. Transconductance
Fig. 7. Input Admittance
270
240
210
180
150
120
90
140
120
100
80
T
J
= - 40ºC
T
J
= -40ºC
25ºC
150ºC
25ºC
150ºC
60
40
60
20
30
0
0
0
40
80
120
160
200
240
3.5
0.4
0
4
4.5
5
5.5
6
6.5
7
1.3
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
280
240
200
160
120
80
V
= 43V
DS
I
I
= 25A
D
G
= 10mA
T
J
= 150ºC
T
J
= 25ºC
40
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10 20 30 40 50 60 70 80 90 100 110 120
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
f = 1 MHz
C
C
iss
oss
0.10
C
rss
0.01
0.0001
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
sion
VDS - Volts
Pulse Width - Seconds
IXTA152N085T
IXTP152N085T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
R
V
V
= 5
Ω
G
= 10V
= 43V
GS
DS
T = 25ºC
J
R
V
V
= 5
Ω
G
= 10V
= 43V
GS
DS
I
= 50A
D
I
= 25A
D
T = 125ºC
J
25
35
45
55
65
75
85
95
105 115 125
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
110
43
41
39
37
35
33
31
29
27
25
23
47
76
t f
td(off)
- - - -
t r
td(on)
- - - -
100
90
80
70
60
50
40
30
20
10
R
G
= 5 , V = 10V
46
45
44
43
42
41
40
Ω
GS
72
68
64
60
56
52
48
TJ = 125ºC, V = 10V
GS
V
= 43V
DS
V
= 43V
DS
I
= 25A
D
I
= 50A
D
I
= 25A
D
I
= 50A
D
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
46
45
44
43
42
41
40
39
80
75
70
65
60
55
50
45
130
120
110
100
90
220
200
180
160
140
120
100
80
T = 25ºC
J
I
= 25A
D
tf
td(off)
- - - -
= 5 , VGS = 10V
Ω
TJ = 125ºC
R
G
I
= 50A
80
D
V
DS = 43V
70
60
T = 125ºC
J
tf
td(off)
- - - -
50
60
T = 125ºC, VGS = 10V
J
40
40
TJ = 25ºC
44
V
DS = 43V
30
20
24
28
32
36
40
48
4
6
8
10
12
14
16
18
20
RG - Ohms
ID - Amperes
IXYS REF: T_152N085T (4V) 6-12-06.xls
© 2006 IXYS CORPORATION All rights reserved
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