IXTP98N075T [IXYS]
Advance Technical Information TrenchMVTM Power MOSFET; 高级技术信息TrenchMVTM功率MOSFET
| 型号： | IXTP98N075T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Advance Technical Information TrenchMVTM Power MOSFET |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchMVTM
Power MOSFET
IXTA98N075T
IXTP98N075T
VDSS = 75
ID25 = 98
RDS(on) ≤ 10 mΩ
V
A
N-Channel Enhancement Mode
TO-263 (IXTA)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
75
75
V
VDGR
TJ = 25°C to 175°C; RGS = 1 MΩ
V
V
TAB
G
VGSM
Transient
20
S
ID25
ILRMS
IDM
TC = 25°C
98
75
A
A
A
Package Current Limit (RMS):
TC = 25°C, pulse width limited by TJM
TO-220 (IXTP)
280
TAB
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
5
V/ns
G
S
IAR
TC = 25°C
TC = 25°C
25
A
G = Gate
S = Source
D = Drain
TAB = Drain
EAS
600
mJ
Pd
TC = 25°C
230
W
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
Features
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 °C Operating Temperature
-40 ... +175
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
TSOLD
Md
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Weight
TO-220
TO-263
3.0
2.5
g
g
Advantages
ꢀ
Easy to mount
Space savings
ꢀ
Symbol
Test Conditions
Characteristic Values
ꢀ
High power density
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Applications
Automotive
- Motor Drives
- 42V Power Bus
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 100 μA
VGS = 20 V, VDS = 0 V
75
V
V
ꢀ
2.0
4.0
200
nA
- ABS Systems
ꢀ
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
IDSS
VDS = VDSS
VGS = 0 V
2
150
μA
μA
ꢀ
TJ = 150°C
Systems
High Current Switching
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
10 mΩ
ꢀ
Applications
DS99541(04/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTA98N075T IXTP98N075T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXTA) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
38
64
S
Ciss
Coss
Crss
3100
520
pF
pF
pF
125
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
20
42
42
27
ns
ns
ns
ns
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Qg(on)
Qgs
68
18
15
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Qgd
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
RthCS
0.65°C/W
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
0.50
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100 BSC
.405
.320
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
Source-Drain Diode
Symbol
Test ConditionsCharacteristic Values
R
0.46
0.74
.018
.029
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0 V
98
280
1.5
A
A
TO-220 (IXTP) Outline
ISM
VSD
trr
Repetitive
IF = IS, VGS = 0 V, Note 1
V
IF = 49 A, -di/dt = 100 A/μs
50
ns
VR = 40 V, VGS = 0 V
Note 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location is 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
相关型号：
IXTQ120N15P
Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
IXYS
IXTQ120N15P
Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
LITTELFUSE
IXTQ120N20P
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明