IXTQ200N10T [IXYS]

TrenchMVTM Power MOSFET; TrenchMVTM功率MOSFET

IXTQ200N10T


型号：	IXTQ200N10T
厂家：	IXYS CORPORATION
描述：	TrenchMVTM Power MOSFET TrenchMVTM功率MOSFET
文件：	总5页 (文件大小：175K)
下载：	下载PDF数据表文档文件

IXTQ22N50P

PolarHVTM Power MOSFET

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83 IXYS

IXTQ22N50P

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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2 LITTELFUSE

IXTQ22N50P

Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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3 IXYS

IXTQ22N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode

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36 IXYS

IXTQ23N60Q

Power MOSFETs Q-Class

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164 IXYS

IXTQ240N055T

TrenchMV Power MOSFET

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12 IXYS

IXTQ24N55Q

Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 IXYS

IXTQ24N55Q

Power Field-Effect Transistor, 24A I(D), 550V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 LITTELFUSE

IXTQ250N075T

TrenchMV Power MOSFET

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24 IXYS

IXTQ26N50P

PolarHVTM Power MOSFET

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77 IXYS

IXTQ26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 IXYS

IXTQ26N60P

Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 LITTELFUSE

IXTQ26P20P

P-Channel Enhancement Mode Avalanche Rated

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43 IXYS

IXTQ26P20P

Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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0 IXYS

IXTQ30N50L2

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode

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21 IXYS

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