IXTQ86N25T [IXYS]
Power Field-Effect Transistor, 86A I(D), 250V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN;
| 型号： | IXTQ86N25T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 86A I(D), 250V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
IXTH86N25T
IXTQ86N25T
IXTV86N25T
VDSS = 250V
ID25 = 86A
RDS(on) ≤ 37mΩ
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
(TAB
TJ = 25°C to 150°C
250
V
D
S
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
250
V
VGSM
Transient
± 30
V
TO-3P (IXTQ)
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
86
75
190
A
A
A
IAS
TC = 25°C
TC = 25°C
10
A
J
G
EAS
1.5
D
S
(TAB)
PD
TC = 25°C
540
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
PLUS220 (IXTV)
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
G
D
S
Md
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
1.13 / 10
Nm/lb.in.
N/lb.
(TAB)
FC
11..65 / 2.5..14.6
G = Gate
S = Source
D = Drain
TAB = Drain
Weight
TO-247
TO-3P
PLUS220
6.0
5.5
4.0
g
g
g
Features
z International standard packages
z Avalanche rated
z Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
250
3
Typ.
Max.
z
Easy to mount
Space savings
High power density
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
VGS = ± 20V, VDS = 0V
V
V
z
z
5
± 200 nA
μA
Applications
IDSS
VDS = VDSS
VGS = 0V
3
TJ = 125°C
250 μA
z DC-DC converters
z Battery chargers
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
37 mΩ
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
© 2007 IXYS CORPORATION, All rights reserved
DS99784A(10/07)
IXTH86N25T IXTQ86N25T
IXTV86N25T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
45
76
S
Ciss
Coss
Crss
5330
515
92
pF
pF
pF
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
22
28
55
25
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Qg(on)
Qgs
105
32
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
28
RthJC
RthCS
0.23 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
86
A
A
V
ÆP 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
172
1.5
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
trr
156
21
ns
A
TO-3P (IXTQ) Outline
IF = 43A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
IRM
QRM
1.7
μC
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
PLUS220 (IXTV) Outline
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
IXTH86N25T IXTQ86N25T
IXTV86N25T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
VGS = 10V
VGS = 10V
8V
8V
7V
7V
6V
6V
5V
60
40
5V
20
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10 12 14 16 18 20 22 24
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 43A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
90
80
70
60
50
40
30
20
10
0
3.4
3
VGS = 10V
VGS = 10V
8V
7V
2.6
2.2
1.8
1.4
1
6V
I D = 86A
I D = 43A
5V
0.6
0.2
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 43A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
TJ = 125ºC
External Lead Current Limit
TJ = 25ºC
20
40
60
80
100 120 140 160 180 200
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXTH86N25T IXTQ86N25T
IXTV86N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
90
80
70
60
50
40
30
20
10
0
110
100
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
- 40ºC
125ºC
3.8
4
4.2 4.4 4.6 4.8
5
5.2 5.4 5.6 5.8
6
6.2 6.4
0
10
20
30
40
50
60
70
80
90
100
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 125V
I
I
D = 25A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
10
20
30
40
50
60
70
80
90 100 110
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
C
rss
f = 1 MHz
5
10
0.0001
0.001
0.01
0.1
1
10
0
10
15
20
25
30
35
40
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH86N25T IXTQ86N25T
IXTV86N25T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
34
30
26
22
18
14
10
35
30
25
20
15
10
RG = 3.3
Ω
RG = 3.3
Ω
VGS = 15V
VGS = 15V
VDS = 125V
VDS = 125V
TJ = 25ºC
I D = 86A
I D = 43A
TJ = 125ºC
25
35
45
55
65
75
85
95
105 115 125
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
ID - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
65
33
31
29
27
25
23
21
30
75
tf
td(off) - - - -
VGS = 15V
tr
td(on) - - - -
RG = 3.3
,
Ω
28
26
24
22
20
18
16
70
65
60
55
50
45
40
55
45
35
25
15
5
TJ = 125ºC, VGS = 15V
VDS = 125V
VDS = 125V
I D = 86A
I D = 43A
I D = 43A
I D = 86A
2
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
28
26
24
22
20
18
16
14
80
75
70
65
60
55
50
45
100
90
80
70
60
50
40
30
20
10
250
225
200
175
150
125
100
75
tf
td(off) - - - -
, VGS = 15V
tf
td(off) - - - -
RG = 3.3
Ω
TJ = 25ºC
TJ = 125ºC, VGS = 15V
VDS = 125V
VDS = 125V
I D = 43A, 86A
TJ = 125ºC
TJ = 25ºC
TJ = 125ºC
50
25
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
18
20
RG - Ohms
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_86N25T(6G) 01-04-07
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