IXTV270N055T2 [IXYS]
Power Field-Effect Transistor, 270A I(D), 55V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN;
| 型号： | IXTV270N055T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 270A I(D), 55V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM
Power MOSFET
VDSS = 55V
ID25 = 270A
RDS(on) ≤ 3.0mΩ
IXTV270N055T2
IXTV270N055T2S
N-Channel Enhancement Mode
Avalanche Rated
PLUS220 (IXTV)
Fast Intrinsic Rectifier
G
D
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
PLUS220SMD (IXTV_S)
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
55
55
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G
S
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
270
120
600
A
A
A
D (Tab)
G = Gate
D
= Drain
TC = 25°C, Pulse Width Limited by TJM
S = Source Tab = Drain
IA
TC = 25°C
TC = 25°C
TC = 25°C
80
600
625
A
mJ
W
EAS
PD
Features
TJ
- 55 ... +175
175
°C
°C
°C
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
TJM
Tstg
- 55 ... +175
z Fast Intrinsic Rectifier
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
300
260
°C
°C
z
Low RDS(on)
FC
Mounting Force (PLUS220)
PLUS220
11..65/2.5..14.6
4.0
N/lb.
g
Advantages
Weight
z
Easy to Mount
Space Savings
z
z
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
55
V
V
• Synchronous Buck Converters
• High Current Switching Power
Supplies
2.0
4.0
±200 nA
μA
• Battery Powered Electric Motors
IDSS
5
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
TJ = 150°C
250 μA
3.0 mΩ
RDS(on)
VGS = 10V, ID = 50A, Note 1
2.4
DS100263(05/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXTV270N055T2
IXTV270N055T2S
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
48
80
S
Ciss
Coss
Crss
9700
1470
250
pF
pF
pF
td(on)
tr
td(off)
tf
19
20
40
37
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 2Ω (External)
Qg(on)
Qgs
167
35
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
43
RthJC
RthCH
0.24 °C/W
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
270
1080
1.3
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
TO-220 Outline
trr
63
3.8
ns
A
IF = 0.5 • ID25, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 27V
120
nC
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTV270N055T2
IXTV270N055T2S
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
VGS = 15V
VGS = 10V
8V
10V
9V
8V
7V
7V
6V
6V
5V
4V
5V
4V
0
0
0
1
2
3
4
5
6
7
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
350
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 135A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
280
240
200
160
120
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 15V
VGS = 10V
10V
9V
8V
7V
6V
I D = 270A
I D = 135A
5V
4V
40
0
-50
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 135A Value vs.
Drain Current
Fig. 6. Input Admittance
200
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175ºC
VGS = 10V
15V - - - - -
TJ = 150ºC
25ºC
60
- 40ºC
40
TJ = 25ºC
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
50
100
150
200
250
300
VGS - Volts
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTV270N055T2
IXTV270N055T2S
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
140
120
100
80
300
250
200
150
100
50
TJ = - 40ºC
25ºC
150ºC
60
TJ = 150ºC
40
TJ = 25ºC
20
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
20
40
60
80
100
120
140
160
180
200
ID - Amperes
VSD - Volts
Fig. 10. Capacitance
Fig. 9. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
= 1 MHz
f
VDS = 27.5V
I
I
D = 135A
G = 10mA
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
180
VDS - Volts
QG - NanoCoulombs
Fig. 11. Drain Current vs. Case Temperature
Fig. 12. Forward-Bias Safe Operating Area
140
120
100
80
1,000
100
10
External Lead Current limit
R
Limit
DS(on)
25µs
External Lead Limit
100µs
1ms
60
10ms
40
100ms
T
T
= 175ºC
= 25ºC
J
DC
20
C
Single Pulse
0
1
-50
-25
0
25
50
75
100
125
150
175
0.1
1
10
100
TC - Degrees Centigrade
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTV270N055T2
IXTV270N055T2S
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
32
28
24
20
16
12
8
24
23
22
21
20
19
18
RG = 2ꢀ , VGS = 10V
DS = 27.5V
RG = 2Ω , VGS = 10V
DS = 27.5V
V
V
TJ = 125ºC
I D = 100A
I D = 200A
TJ = 25ºC
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
50
45
40
35
30
25
20
15
10
62
58
54
50
46
42
38
34
30
350
300
250
200
150
100
50
70
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 27.5V
t f
t
d(off) - - - -
60
50
40
30
20
10
0
RG = 2Ω, VGS = 10V
V
VDS = 27.5V
I D = 200A , 100A
I D = 100A
I D = 200A
0
25
35
45
55
65
75
85
95
105
115
125
2
4
6
8
10
12
14
16
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
280
240
200
160
120
80
280
240
200
160
120
80
55
50
45
40
35
30
25
20
15
10
70
65
60
55
50
45
40
35
30
25
tf
t
d(off) - - - -
tf
t
d(off) - - - -
RG = 2ꢀ, VGS = 10V
TJ = 125ºC, VGS = 10V
VDS = 27.5V
I D = 100A
VDS = 27.5V
I D = 200A
TJ = 25ºC, 125ºC
40
40
0
0
40
60
80
100
120
140
160
180
200
2
4
6
8
10
12
14
16
ID - Amperes
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
IXTV270N055T2
IXTV270N055T2S
0.40
Fig. 19. Maximum Transient Thermal Impedance
adas
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_270N055T2(68)5-13-10-A
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