IXXH50N60C3 [IXYS]

Extreme Light Punch Through IGBT for 20-60 kHz Switching; 极端的光透过, IGBT为20-60 kHz开关
IXXH50N60C3
元器件型号: IXXH50N60C3
生产厂家: IXYS CORPORATION    IXYS CORPORATION
描述和应用:

Extreme Light Punch Through IGBT for 20-60 kHz Switching
极端的光透过, IGBT为20-60 kHz开关

开关 双极性晶体管
PDF文件: 总6页 (文件大小:175K)
下载文档:  下载PDF数据表文档文件
型号参数:IXXH50N60C3参数

IXXH50N60C3D1

Extreme Light Punch Through IGBT for 20-60 kHz Switching

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34 IXYS

IXXH60N65B4H1

Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,

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1 IXYS

IXXH75N60B3

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXXH75N60B3

Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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0 IXYS

IXXH75N60B3D1

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXXH75N60B3D1

Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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0 IXYS

IXXH75N60C3D1

Insulated Gate Bipolar Transistor,

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1 LITTELFUSE

IXXH75N60C3D1

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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2 IXYS

IXXK100N60B3H1

Extreme Light Punch Through IGBT for 10-30kHz Switching

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54 IXYS

IXXK100N60C3H1

XPTTM 600V GenX3TM w/ Diode

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26 IXYS

IXXK100N75B4H1

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXXK110N65B4H1

Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,

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1 IXYS

IXXK200N65B4

Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,

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0 IXYS

IXXK300N60B3

Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

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0 IXYS

IXXK300N60C3

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE